3LN04MH

3LN04MH SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
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Technical content

Features

• 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D 0.35 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 1.4 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm25 0.8mm) 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 30 V Zero-Gate Voltage Drain Current I DSS VDS =30V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =100µA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =200mA 360 600 mS R DS (on)1 I D =200mA, VGS =4V 0.75 1.0 Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =100mA, VGS =2.5V 0.9 1.3 Ω R DS (on)3 I D =10mA, VGS =1.5V 1.8 3.6 Ω Input Capacitance Ciss V DS =10V, f=1MHz 28 pF Output Capacitance Coss V DS =10V, f=1MHz 6.0 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 3.1 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 17.5 ns Rise Time t r See specified Test Circuit. 34.2 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 104 ns Fall Time t f See specified Test Circuit. 55.5 ns Marking : FD Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806PE SY IM TC-00000232 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. SANYO Semiconductors DATA SHEET 3LN04MH N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No. A0550-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =10V, VGS =4V, ID =350mA 0.87 nC Gate-to-Source Charge Qgs V DS =10V, VGS =4V, ID =350mA 0.39 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =4V, ID =350mA 0.14 nC Diode Forward Voltage V SD IS=350mA, VGS =0V 0.86 1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7019A-003 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 0.250.250.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 0 to 0.02 PW=10 µs D.C.≤1% P. G 50Ω G S D ID =200mA R L=75Ω VDD =15V VOUT 3LN04MH VIN VIN R g R g=1.2kΩ ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS R DS (on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Ambient Temperature, Ta -- °C Drain Current, ID -- mA IT11711 IT11712 IT11709 IT11710 1.0 0.50 150 100 350 300 250 200 8.0V 6.0V 5.0V 4.0V 2.5V 2.0V 100 200 180 160 140 120 1.0 1.5 2.0 2.5 --25 Ta= V DS =10V 2345678 1.5 2.5 3.0 3.5 0.5 2.0 4.0 1.0 1.5 2.5 3.0 0.5 2.0 Ta=25°C 10mA 100mA ID =200mA --40--60 --20 0 20 40 60 80 100 120 160 140 ID =100mA, V GS =2.5V ID =10mA, V GS =1.5V ID =200mA, V GS =4.0V V GS =1.5V

No. A0550-3/4 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W VGS -- Qg SW Time -- ID Ciss, Coss, Crss -- VDS yfs -- ID Drain Current, ID -- mA Switching Time, SW Time -- ns Drain Current, ID -- mA Forward Transfer Admittance, yfs -- mS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A IS -- VSD Diode Forward V oltage, VSD -- V Source Current, IS -- mA 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT11717 03 0 10 15 20 255 IT11716 10 100 100023 5 72 3 5 7 1.0 100 IT11715 IT11714IT11713 1.0 100 1023 5 7 10022 35 7 35 7 1000 1000 1.0 100 1000 tf tr Crss Coss Ciss V DS =10V ID =350mA V DS =10V Ta= --25 75°C 25°C 100 V GS =0V f=1MHz --25 Ta= td(off) td(on) V DS =15V V GS =4V 20 40 60 80 100 120 0.1 0.2 0.3 0.7 0.6 0.5 0.4 140 160 IT11708 IT11719 0.1 1.0 1023 5 7 23 5 7 23 5 1.0 0.01 0.1 100msDC operation (Ta=25 °C) 10ms IDP =1.4A ID =0.35A ≤10µs 1ms Mounted on a ceramic board (900mm 250.8mm) Operation in this area is limited by RDS (on). 100 µs Ta=25°C Single pulse Mounted on a ceramic board (900mm 25 0.8mm)

No. A0550-4/4 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS Note on usage : Since the 3LN04MH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice.