3LN02M SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. 1 : Gate 2 : Source 3 : Drain SANYO : MCP3 Marking : YD Continued on next page. retemaraPl obmySs noitidnoCs gnitaRt inU egatloVecruoS-ot-niarDV SSD 03V egatloVecruoS-ot-etaGV SSG 01±V )CD(tnerruCniarDI D 3.0A )eslup(tnerruCniarDI PD WP £ elcycytud,sµ01 £ %12 .1A noitapissiDrewoPelbawollAP D 51.0W erutarepmeTlennahCh cT 051 erutarepmeTegarotSg tsT 051+ot55– retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnwodkaerBecruoS-ot-niarDV SSD)RB( ID V,Am1= SG 0=0 3V tnerruCniarDegatloVetaG-oreZI SSD V SD V,V03= SG 0=0 1A µ tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V8±= SD 0=0 1±A µ egatloVffotuCV )ffo(SG V SD I,V01= D Aµ001=4 .03 .1V ecnattimdArefsnarTdrawroF| sfy|V SD I,V01= D Am051=4 .06 5.0S ecnatsiseRetatS-nOecruoS-ot-niarDcitatS R )no(SD 1I D V,Am051= SG V4=9 .02 .1 W R )no(SD 2I D V,Am08= SG V5.2=2 .17 .1 W R )no(SD 3I D V,Am01= SG V5.1=6 .22 .5 W

No.6128-2/4 3LN02M Switching Time Test Circuit Continued from preceding page. PW=10 µs D.C.≤1% VIN P. G 50W G D ID =150mA R L=100W VDD =15V VOUT 3LN02M VIN S retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am ecnaticapaCtupnIs siCV SD zHM1=f,V01=0 3F p ecnaticapaCtuptuOs soCV SD zHM1=f,V01=5 1F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V01=0 1F p emiTyaleDNO-nruTt )no(d tiucriCtseTdeificepseeS2 3s n emiTesiRt r tiucriCtseTdeificepseeS0 11s n emiTyaleDFFO-nruTt )ffo(d tiucriCtseTdeificepseeS0 52s n emiTllaFt f tiucriCtseTdeificepseeS0 61s n egrahCetaGlatoTg QV SD V,V01= SG I,V01= D Am003=4 3.2C n egrahCecruoS-ot-etaGs gQV SD V,V01= SG I,V01= D Am003=8 3.0C n egrahC"relliM"niarD-ot-etaGd gQV SD V,V01= SG I,V01= D Am003=5 4.0C n egatloVdrawroFedoiDV DS IS V,Am003= SG 0=8 .02 .1V 0.1 0.05 0.2 0.15 0.10 0.3 0.20 0.4 0.25 0.30 ID -- VDS V GS =1.5V 2.0V 2.5V 6.0V 4.0V 3.5V 3.0V 0.5 1.0 1.5 2.0 0.3 0.2 0.1 0.6 0.5 0.4 2.5 ID -- VGS V DS =10V 0.5 1.0 1.5 2.0 2.5 3.0 789 1 0 R DS (on) -- VGS Ta=25°C 80mA 0.01 0.1 1.0 0.123 5 7 23 5 7 1.0 R DS (on) -- ID V GS =4V ID =150mA Ta=75°C 25°C --25°C Ta=--25 IT00224 IT00225 IT00226 IT00227 Drain Current, ID –A Drain-to-Source Voltage, VDS –V Drain Current, ID –A Gate-to-Source Voltage, VGS –V Gate-to-Source Voltage, VGS –V Static Drain-to-Source On-State Resistance, RDS(on) – W Static Drain-to-Source On-State Resistance, RDS(on) – W Drain Current, ID –A

No.6128-3/4 3LN02M 0.5 1.0 1.5 2.0 2.5 VGS -- Qg V DS =10V ID =300mA 0.01 0.1 1000 100 1.023 5 723 5 7 SW Time -- ID V DD =15V V GS =4V 1.0 10 15 100 20 30 25 Ciss, Coss, Crss -- VDS f=1MHz 0.01 0.1 1.0 1.4 V GS =0 IF -- VSD Ta=75 --25 td(on) td(off) tr tf Crss Coss Ciss IT00232 IT00233 IT00234 IT00235 0.01 0.1 0.123 5 7 23 5 7 1.0 1.0 V DS =10V ‰yfs‰ -- ID --60 --40 0.5 --20 1.0 1.5 2.0 2.5 3.0 80 100 120 140 R DS (on) -- Ta ID =80mA, V GS =2.5V ID =150mA, V GS =4.0V 75°C 25°C Ta=--25 IT00230 IT00231 Forward Transfer Admittance, |yf s|–S Drain Current, ID –AAmbient Temperature, Ta – ˚C Static Drain-to-Source ON-State Resistance, RDS(on) – WForward Current, IF –A Diode Forward Voltage, VSD –V Switching Time, SW Time – ns Drain Current, ID –A Ciss,Coss,Crss – pF Drain-to-Source Voltage, VDS –V Gate-to-Source Voltage, VGS – V Total Gate Charge, Qg – nC 0.01 0.1 0.123 5 7 23 5 7 1.0 1.0 R DS (on) -- ID V GS =2.5V 0.001 1.0 0.01 0.123 5 7 23 5 7 R DS (on) -- ID V GS =1.5V Ta=75°C 25°C --25°C Ta=75°C 25°C --25°C IT00228 IT00229 Static Drain-to-Source On-State Resistance, RDS(on) – W Drain Current, ID –A Static Drain-to-Source On-State Resistance, RDS(on) – W Drain Current, ID –A

PS No.6128-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 1999. Specifications and information herein are subject to change without notice. 3LN02M 0 20 40 60 100 120 140 0.20 0.15 0.10 0.05 160 PD -- Ta IT00236 Allowable Power Dissipation, PD –W Ambient Temperature, Ta – ˚C