3HP04SS

3HP04SS SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• 4V drive.
• Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -200 mA Drain Current (Pulse) I DP PW≤10µs, duty cycle≤1% - -800 mA Allowable Power Dissipation P D Mounted on a glass-epoxy board (145mm✕80mm✕1.6mm) 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=--1mA, VGS=0V --30 V Zero-Gate Voltage Drain Current I DSS VDS=--30V, VGS=0V --1 µA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 µA Cutoff Voltage V GS(off) V DS=--10V, ID=--100µA --1.2 --2.6 V Forward Transfer Admittance ⏐yfs⏐ VDS=--10V, ID=--100mA 150 250 mS Static Drain-to-Source On-State Resistance RDS(on)1 I D=--100mA, VGS=--10V 1.4 1.9 Ω RDS(on)2 I D=--50mA, VGS=--4V 2.8 4.0 Ω Input Capacitance Ciss V DS=--10V, f=1MHz 22 pF Output Capacitance Coss V DS=--10V, f=1MHz 6.0 pF Reverse Transfer Capacitance Crss V DS=--10V, f=1MHz 3.5 pF Marking : XH Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1407PE TI IM TC-00001003 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 3HP04SS P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No. A0639-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Turn-ON Delay Time t d(on) See specified Test Circuit. 34 ns Rise Time t r See specified Test Circuit. 59 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 435 ns Fall Time t f See specified Test Circuit. 250 ns Total Gate Charge Qg V DS=--10V, VGS=--10V, ID=--200mA 1.6 nC Gate-to-Source Charge Qgs V DS=--10V, VGS=--10V, ID=--200mA 0.5 nC Gate-to-Drain “Miller” Charge Qgd V DS=--10V, VGS=--10V, ID=--200mA 0.1 nC Diode Forward Voltage V SD IS=--200mA, VGS=0V --0.86 --1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7029-003 PW=10µs D.C.≤1% P. G 50Ω G S D ID= --100mA RL=150Ω Rg VDD= --15V VOUT 3HP04SS VIN --10V VIN Rg=5kΩ ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA --20 --200 --60 --100 --140 --180 --40 --80 --120 --160 --40 --20 --120 --80 --160 --60 --140 --100 --180 --200 IT11209 IT11210 Ta= --2 5°C VGS= --2.0V VDS= --10V --10.0V --2.5V --4.0V --6.0V --8.0V --15.0V 0.6 0.25 0.2 0.070.07 1.4 0.45 0.3 0.3 1.4 0.8 0.1 Top View Bottom View 1 : Gate 2 : Source 3 : Drain SANYO : SSFP

No. A0639-3/4 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W VGS -- Qg SW Time -- ID Ciss, Coss, Crss -- VDS ⏐yfs⏐ -- ID IS -- VSD Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, ⏐yfs⏐ -- mS Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V --1 --2 --6 --4 --3 --7 --8 --9 --5 --10 IT11217 100 1000 IT11215 IT11213 1.0 IT11216 IT11214 --0.0001 --0.001 --0.01 --0.1 --1.0 VGS=0V --25 Ta= td(on) td(off) tf tr VDD= --15V VGS= --10V Ciss Coss Crss VDS= --10V ID= --200mA --0.001 --0.0123 5 7 2 --0.135 7 2 --1.035 7 100 VDS= --10V 75°CTa= --25 25°C f=1MHz 20 40 0.05 0.10 0.15 0.20 60 80 100 120 140 160 IT11975 Mounted on a glass-epoxy board (145mm✕80mm✕1.6mm) RDS(on) -- VGS RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ambient Temperature, Ta -- °C IT11212 IT11211 Ta=25°C - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 VGS= --4V , ID= --50mA VGS= --10V , ID= --100mA ID= --50mA --100mA

No. A0639-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS Note on usage : Since the 3HP04SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of November, 2007. Specifications and information herein are subject to change without notice.