3HP04MH

3HP04MH SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -200 mA Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -800 mA Allowable Power Dissipation P D Mounted on a ceramic board (900mm25 0.8mm) 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =--1mA, VGS =0V --30 V Zero-Gate Voltage Drain Current I DSS VDS =--30V, VGS =0V --1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =--10V, ID =--100µA --1.2 --2.6 V Forward Transfer Admittance yfs VDS =--10V, ID =--100mA 150 250 mS Static Drain-to-Source On-State Resistance R DS (on)1 I D =--100mA, VGS =--10V 1.4 1.9 Ω R DS (on)2 I D =--50mA, VGS =--4V 2.8 4.0 Ω Input Capacitance Ciss V DS =--10V, f=1MHz 22 pF Output Capacitance Coss V DS =--10V, f=1MHz 6.0 pF Reverse Transfer Capacitance Crss V DS =--10V, f=1MHz 3.5 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 34 ns Rise Time t r See specified Test Circuit. 59 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 435 ns Fall Time t f See specified Test Circuit. 250 ns Marking : WZ Continued on next page. 82306 / 62006PE MS IM TB-00002268 3HP04MH P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

No. A0445-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =--10V, VGS =--10V, ID =--200mA 1.6 nC Gate-to-Source Charge Qgs V DS =--10V, VGS =--10V, ID =--200mA 0.5 nC Gate-to-Drain “Miller” Charge Qgd V DS =--10V, VGS =--10V, ID =--200mA 0.1 nC Diode Forward Voltage V SD IS=--200mA, VGS =0V --0.86 --1.2 V Package Dimensions Switching Time Test Circuit unit : mm 7019A-003 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 0.250.250.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 0 to 0.02 PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --100mA R L=150Ω Rg VDD = --15V VOUT 3HP04MH VIN --10V VIN Rg=5k Ω ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS R DS (on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Ambient Temperature, Ta -- °C Drain Current, ID -- mA --20 --200 --60 --100 --140 --180 --40 --80 --120 --160 --40 --20 --120 --80 --160 --60 --140 --100 --180 --200 IT11209 IT11210 IT11212 IT11211 Ta= --25 Ta=25°C V GS = --2.0V V DS = --10V - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 ID= --50mA, V GS = --4V ID = --100mA, V GS = --10V --10.0V ID = --50mA --100mA --2.5V --4.0V --6.0V --8.0V --15.0V

No. A0455-3/4 20 40 0.1 0.2 0.3 0.4 0.5 0.7 0.6 60 80 100 120 140 160 IT11219 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Mounted on a ceramic board (900mm 250.8mm) VGS -- Qg SW Time -- ID Ciss, Coss, Crss -- VDS yfs -- ID IS -- VSD Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- mS Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A IT11218 --1 --2 --6 --4 --3 --7 --8 --9 --5 --10 IT11217 100 1000 IT11215 IT11213 1.0 IT11216 IT11214 --0.0001 --0.001 --0.01 --0.1 --1.0 --0.1 --1.0 --0.01 223 5 23 5 7 --1.0 35 7 --10--0.1 V GS =0V --25 Ta=75 td(on) td(off) tf tr V DD = --15V V GS = --10V Ciss Coss Crss V DS = --10V ID = --200mA ≤10µsIDP = --800mA ID = --200mA Operation in this area is limited by RDS (on). 100ms 1ms 10ms DC operation (Ta=25 °C) --0.001 --0.0123 5 7 2 --0.135 7 2 --1.035 7 100 V DS = --10V 75°CTa= --25 25°C f=1MHz Ta=25°C Single pulse Mounted on a ceramic board (900mm 25 0.8mm)

No. A0445-4/4PS Note on usage : Since the 3HP04MH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice.