3DD13002-HF_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 Transistors NPN Transistors 3DD13002-HF ■ Features
- Collector Current Capability IC=1A
- Collector Emitter Voltage VCEO=400V
- Power Switching Applications 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 600 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 400 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 600 V , IE= 0 100 Collector- emitter cut-off current ICEO VCE= 400 V , IE= 0 100 Emitter cut-off current IEBO VEB= 7V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=200 mA, IB=40mA 0.5 Base - emitter saturation voltage VBE(sat) IC=200 mA, IB=40mA 1.1 hFE(1) VCE= 10V, IC= 200mA 10 40 hFE(2) VCE= 10V, IC= 0.25mA 5 Fall time tf IC=1A, IB1=-IB2=0.2A 0.5 Storage time ts VCC=100V 2.5 Transition frequency fT VCE= 10V, IC= 100mA,f=1MHz 5 MHz uS DC current gain V V uA ■ Classification of hfe(1)
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Type 3DD13002A-HF 3DD13002B-HF 3DD13002C-HF 3DD13002D-HF 3DD13002E-HF 3DD13002F-HF Range 10-15 15-20 20-25 25-30 35-35 35-40 Type 13002A F 13002B F 13002C F 13002D F 13002E F 13002F F
www.kexin.com.cn2 Transistors NPN Transistors 3DD13002-HF ■ Typical Characterisitics 000100101 0.1 0 25 50 75 100 125 150 0.00 0.10 0.20 0.30 0.40 0.50 0.60 000100101 100 1000 0.1 1 10 100 1000 100 0111.0 100 1000 0.1 100 1000 0 2 4 6 8 10 100 150 200 250 ICfT — — COMMON EMITTER VCE=10V Ta=25℃ COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) 200100 β=5 ICVBEsat — — BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ PC — — Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION PC (W) Ta=100 ℃ Ta=25℃ β=5 ICVCEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURREMT IC (mA) IChFE — — Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= 10V f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib — — Cob Cib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) 5000 COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) IC — — VBE Ta=25℃ Ta=100℃ COMMON EMITTER VCE=10V Static Characteristic COMMON EMITTER Ta=25℃ 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA IB=1mA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V)