ZXMP3A17DN8 ZETEX

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 7

Technical content

V(BR)DSS = -30V; RDS(ON) = 0.070 ;I D= -4.4A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • Motor Drive
  • LCD backlighting DEVICE MARKING ZXMP 3A17D ZXMP3A17DN8 PROVISIONAL ISSUE A - AUGUST 2002 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMP3A17DN8TA 7 ’‘ 12mm 500 units ZXMP3A17DN8TC 13’‘ 12mm 2500 units

ORDERING INFORMATION

PROVISIONAL ISSUE A - AUGUST 2002 PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a)(d) R θJA 100 °C/W Junction to Ambient (b)(e) R θJA 70 °C/W Junction to Ambient (b)(d) R θJA 60 °C/W THERMAL RESISTANCE Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GS /H1100620 V Continuous Drain Current@V GS=10V; T A=25 /H11034C (b)(d) @VGS=10V; T A=70 /H11034C (b)(d) @VGS=10V; T A=25 /H11034C (a)(d) ID -4.4 -3.6 -3.4 A A A Pulsed Drain Current (c) I DM -16.2 A Continuous Source Current (Body Diode)(b) I S -2.5 A Pulsed Source Current (Body Diode)(c) I SM -16.2 A Power Dissipation at TA=25°C (a)(d) Linear Derating Factor PD 1.25 W mW/°C Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD 1.8 W mW/°C Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD 2.1 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS.

PROVISIONAL ISSUE A - AUGUST 2002 100m 1 10 10m 100m Single Pulse Tamb=25°C O n ea c t i v ed i e RDS(on) Limited 100µs 1ms 10ms 100ms1s DC Safe Operating Area -ID Drain Current (A) -VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 1600.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Two active die O n ea c t i v ed i e Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k0 100 110 Tamb=25°C O n ea c t i v ed i e Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 Single Pulse Tamb=25°C O n ea c t i v ed i e Pulse Power Dissipation Pulse Width (s) Maximum Power (W) CHARACTERISTICS

PROVISIONAL ISSUE A - AUGUST 2002 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V ID=-250 µ A, V GS=0V Zero Gate Voltage Drain Current I DSS -1.0 /H9262AV DS=-30V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D=-250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.070 0.110 /H9024 /H9024 VGS=-10V, I D=-3.2A VGS=-4.5V, I D=-2.5A Forward Transconductance (1)(3) g fs 6.4 S V DS=-15V,I D=-3.2A DYNAMIC (3) Input Capacitance C iss 630 pF VDS=-15 V, V GS=0V, f=1MHzOutput Capacitance C oss 113 pF Reverse Transfer Capacitance C rss 78 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.74 ns VDD =-15V, I D=-1A RG=6.0 Ω ,V GS=-10V Rise Time t r 2.87 ns Turn-Off Delay Time t d(off) 29.2 ns Fall Time t f 8.72 ns Gate Charge Q g 8.28 nC V DS=-15V,V GS=-5V, ID=-3.2A Total Gate Charge Q g 15.8 nC VDS=-15V,V GS=-10V, ID=-3.2AGate-Source Charge Q gs 1.84 nC Gate-Drain Charge Q gd 2.80 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.85 -1.2 V T J=25°C, I S=-2.5A, VGS=0V Reverse Recovery Time (3) t rr 19.5 ns T J=25°C, I F=-1.7A, di/dt= 100A/ µ sReverse Recovery Charge (3) Q rr 16.3 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - AUGUST 2002 0.1 1 100.01 0.1 0.1 1 100.01 0.1 1234 0.1 -50 0 50 100 1500.6 0.8 1.0 1.2 1.4 0.1 1 10 0.1 0.1 5V10V 4V 3.5V -VGS 2.5V Output Characteristics T = 25°C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 5V 4V 3.5V 1.5V 10V 2.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS= 10V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS= -10V ID = -3.2A VGS(th) VGS=VDS ID = -250uA Normalised RDS(on)and VGS(th) Tj Junction Temperature (°C) 10V 3.5V 2.5V On-Resistance v Drain Current T = 25°C -VGS RDS(on)Drain-Source On-Resistance(Ω) -ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A) TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE A - AUGUST 2002 Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit Charge QGS QGD QG 10V VG V VDS GS 12V 0.2µF 50k 0.3µF ID IG Current Regulator Same as D.U.T D.U.T VDS VGS 90% 10% tr tftd(off)td(on) RG VGS RD VDS Vcc Pulse Width < 1µS Duty Factor 0.1%/c163 0.1 1 100 200 400 600 800 1000 CRSS COSS CISS VGS=0 V f=1 M H z C Capacitance (pF) -VDS -D r a i n-S o u r c eV o l t a g e( V ) 0 5 10 15 200 ID =- 3 . 2 A VDS= -15V G a t e - S o u r c eV o l t a g evG a t eC h a r g eCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) TYPICAL CHARACTERISTICS

PROVISIONAL ISSUE A - AUGUST 2002 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uk.sales@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex plc 2002 DIM INCHES MILLIMETRES MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e 0.050 BSC 1.27 BSC b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 /H90520/H110348/H110340/H110348/H11034 h 0.010 0.020 0.25 0.50 PACKAGE DIMENSIONSPACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES