3710Z KIA
Document overview
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- PDF pages: 7
Technical content
1.Description ThispowerMOSFETisdesignedusingtrenchlayout-basedprocess.Thistechnology improvestheperformancescomparedwithstandardpartsfromvarioussources.Allofthesepower MOSFETsaredesignedforapplicationsinswitchingregulators,switchingconvertors,motorandrelay drivers,anddriversforhighpowerbipolarswitchingtransistorsdemandinghighspeedandlowgatedrive power. 2.Applications n VDSS=100V,RDS(on)=18mΩ,ID=59A n Ultralowon-resistance n Dynamicdv/dtrating n 175°Coperatingtemperature n Fastswitching n Fullyavalancherated 3. Pinconfiguration 1of7 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
- Absolutemaximumratings Parameter Symbol Max. Units Continuousdraincurrent,V GS @10V ID @T C =25 °C 59 AContinuousdraincurrent,V GS @10V ID @T C =100 °C 42 Pulseddraincurrent 1) IDM 240 Maximumpowerdissipation PD @TC =25 °C 160 W Gate-to-sourcevoltage VGS +20 V Singlepulseavalancheenergy(thermallylimited) (Tj=25°C,L=0.27mH,RG=25Ω,IAS=35A,VGS=10V) Eas 170 mJ Operatingjunctionand storagetemperaturerange Tj -55to+175 Solderingtemperature,for10seconds 300 5. Thermalresistance Parameter Symbol Typ. Max. Units Junction-to-case RθJC - 0.92 °C/WCase-to-sink,flat,greasedsurface RθCS 0.50 - Junction-to-ambient RθJA - 62 2of7 KIA SEMICONDUCTORS 3710Z
- Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min. Typ. Max. Untis Drain-to-sourcebreakdownvoltage V(BR)DSS VGS=0V,ID=250μA 100 - - V Breakdownvoltagetemp.coefficient ΔV(BR)DSS/ΔTJ Referenceto 25°C,ID=1mA - 0.10 - V/°C Staticdrain-to-source on-resistance2) RDS(ON) VGS=10V,ID=35A - - 18 mΩ Gatethresholdvoltage VGS(th) VDS=VGS,ID=250μA 2.0 - 4.0 V Forwardtransconductance 2) g(fs) VDS=50V,ID=35A 35 - - S Drain-to-sourceleakagecurrent IDSS VDS=100V,VGS=0V - - 20 μA 3) VDS=100V,VGS=0V - - 250 Gate-to-sourceforwardleakage IGSS VGS=20V - - +200 nA Gate-sourcereverseleakage VGS=-20V - - -200 Totalgatecharge 2) Qg ID=35A VDS=80V VGS=10V - 87 120 nCGate-to-sourcecharge 2) Qgs - 21 28 Gate-to-draincharge 2) Qgd - 30 40 Turn-ondelaytime 2) td(on) VDD=50V ID=35A RG=6.8Ω VGS=10V, 18 - ns Risetime 2) tr 86 - Turn-offdelaytime 2) td(off) - 47 - Falltime 2) tf - 60 - Inputcapacitance CISS VGS=0V VDS=25V f=1.0MHz - 2990 - pF Outputcapacitance COSS - 300 - Reversetransfercapacitance CRSS - 160 - Outputcapacitance COSS VGS=0V,VDS=1V, f=1.0MHz 1180 - Outputcapacitance COSS VGS=0V,VDS=80V, f=1.0MHz 190 - Effectiveoutputcapacitance COSS eff VGS=0V,VDS=0V to80V 300 - 3of7 KIA SEMICONDUCTORS 3710Z
7.Source-drainratingsandcharacteristics (TJ=25°C,unlessotherwisenotes) Notes: 1. Repetitive rating;pulse width limited by max. junction temperature. 2. Pulse test,t<300μs;duty cycle<2%. 3. TJ=+125°C. 4of7 Parameter Symbol Conditions Min. Typ. Max. Untis Diodeforwardvoltage 2) VSD VGS=0V,IS=35A - - 1.3 V Continuoussourcecurrent (bodydiode) IS VGS=0V - - 59 APulsedsourcecurrent (bodydiode) ISM repetitive,pulsewidth limitedbyT JM - - 240 Reverserecoverytime 2) trr IF=35A,VDD=25V di/dt=100A/μs - 56 75 ns Reverserecoverycharge 2) Qrr - 106 160 nC KIA SEMICONDUCTORS 3710Z
8.Testcircuitsandwaveforms 5of7 KIA SEMICONDUCTORS 3710Z