36MB

36MB NELLSEMI

Document overview

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• PDF pages: 4

Technical content

FEATURES

UL recognition file number E320098 Universal 3-way terminals: snap-on, wire Typical IR less than 1.0 µA TYPICAL□APPLICATIONS General purpose use in AC/DC bridge full wave Case: GBPC Epoxy meets UL 94 V-O flammability rating Nickel plated on faston lugsTerminals: , solderable per□J-STD-002□and JESD22-B102. Polarity: As□marked Weight :□18g□(0.63□ozs) SEMICONDUCTOR RoHSRoHS Page□1□of□4 Glass Passivated Single-Phase Bridge Rectifier, 35A N High Power Productsell Compliant to RoHS wrap-around, or PCB mounting High surge current capability Low thermal resistance Solder dip 260°C, 40s rectification for power supply, home appliances, office equipment, industrial automation applications. MECHANICAL□DATA Mounting□Torque: 20□inches-lbs.□max.□(M5□screw) 36MB 36MB08 Thru 36MB16 Glass passivated chips 28.5 +0.5- 28.5 +0.5 22.2 +0.3 +0.5 22.2 +0.3 9.5 0.8 6.3 Φ5 +0.3 ~ - All□dimensions□in□millimeters PRIMARY CHARACTERRISTICS IF(AV) 35A VRRM 800V□to□1600V 1.1V 5 Aµ 150ºC IFSM IR VF TJ□max. 400A

Page□2□of□4 N High Power Productsell MAXIMUM RATINGS (T = 25°C unless otherwise noted)A PARAMETER V V SYMBOL 36MB UNIT 900 1100 1300 1700 800 1000 1200 1600 08 1612 800 1000 1200 1600 V Maximum□repetitive□peak□reverse□voltage Maximum□RSM□voltage□(non-repetitve□peak□reverse□voltage) Maximum□DC□blocking□voltage Maximum□average□forward□rectified□output□current□□(Fig.1) Peak□forward□surge□current□single□sine-wave□superimposed□on rated□load Rating□(non-repetitive,□for□t□greater□than□1□ms□and□less□than□8.3□ms) for□fusing RMS□isolation□voltage□from□case□to□leads Operating□junction□storage□temperature□range VRRM VRMS IFSM VDC IF(AV) VISO I t2 T ,TJ STG 2500 660 -55 to□150 400 A s2 A A V ºC ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)A PARAMETER V µA SYMBOL 36MB UNIT 1008 1612 Maximum□instantaneous□forward□drop□per□diode Maximum□reverse□DC□current□at□rated□DC□blocking Typical□junction□capacitance□per□diode VF IR CJ 300 500 1.1 pF voltage□per□diode TEST CONDITIONS IF =□17.5A TA =□25 C° 4V,□1MHz TA =□150 C° THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)A PARAMETER °C/W SYMBOL 36MB UNIT 1008 1612 Typical□thermal□resistance (1)□With□heatsink RθJC (1) (2)□Bolt□down□on□heatsink□with□silicone□thermal□compound□between□bridge□a nd□mounting□surface□for□maximum□heat□transfer□with Notes #10□screw 1.4 36MB

( ) Average Forward Current A ( ) Average Forward Current A Case Temperature(℃ ) Ambient Temperature °( )C Fig Maximum Output Rectified Current.1 Fig Maximum□Output□Rectified□Current.2 Peak Forward Surge Current (A) Number of Cycles at 60 Hz ( ) Average Power Dissipation of Bridge W Average Output Current (A) Fig Maximum Power Dissipation.3 Fig. Maximum Non-Repetitive Peak Forward4 Page□3□of□4 0 10 20 30 40 Surge Current Per Diode 0 25 50 75 100 125 150 175 2000 0 10 20 30 40 50 60 70 80 90 100 1000 100 1 10 100 J 36MB Bridges Mounted on 9.5 3.5 4.6"x x (22.9 8.9 11.7 )x x cm AL Finned Plate.

60 HZ Resistive or

RthS A C□W- = 0.5° / Capacitive Load TJ = TJ max. Resistive or Inductive Load

1.0 Cycle

TJ = T max. 0.5 -Single Sine Wave

Page□4□of□4 SEMICONDUCTOR RoHSRoHS N High Power Productsell 0.01 0.1 100 ( ) Instantaneous Forward Current A Fig Typical Instantaneous Forward.5 Characteristics Per Leg Instantaneous Forward Voltage (V) Fig Typical Reveres Leakage.6 Characteristics Per Leg Instantaneous Reverse Leakage Current (µA) Percent of Rated Peak Reverse Voltage (%) 0 20 40 60 80 1000.01 0.1 100 Fig Typical Junction Capacitance.7 Per Leg Fig Typical Transient Thermal lmpedance.8 Per Leg ( ) Junction Capacitance p F ( ) Transient Thermal lmpedance (°CW) p F Reverse Voltage (V) t Heating, Time (sec.) 0.01 0.1 1 10 100 100 1,000 Z 100 1,000 1 10 100 36MB TJ µs = 25 Pulse Width = 300 1% Duty Cycle f MH= 1.0 Vsig MVp p= 50 - TJ = 25° C = 25° C f MH= 1.0 Vsig MVp p= 50 - TJ TJ = 25° C TJ = 125° C