3423 KIA

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Technical content

-2.0A，-20V P-CHANNELMOSFETKIA SEMICONDUCTORS 3423KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA3423usesadvancedtrenchtechnologytoprovideexcellentR DS(on),lowgatecharge andoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWM applications.StandardProductKIA3423isPb-free(meetsROHS&Sony259specifications).KIA3423isa GreenProductorderingoption.KIA3423iselectricallyidentical. 2.Features n VDS(V)=-20V n ID=-2.0A n RDS(on)<92mΩ(VGS=-10V,ID=-2.0A) n RDS(on)<118mΩ(VGS=-4.5V,ID=-2.0A) n RDS(on)<166mΩ(VGS=-2.5V,ID=-1.0A) 3.Symbol 1of5 Rev1.1JAN2014 Pin Function

1 Gate

2 Source

3 Drain

-2.0A，-20V P-CHANNELMOSFETKIA SEMICONDUCTORS 3423KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDS -20 V Gate-sourcevoltage VGS +12 V Continuousdraincurrent A TA=25ºCF ID -2.0 ATA=70ºCF -2.0 Pulseddraincurrent B IDM -8 A Totalpowerdissipation A TA=25 ºC PD 1.4 W TA=70ºC 0.9 W Junctionandstoragetemperaturerange TJ, TSTG -55to150 ºC 5. Thermalcharacteristics Parameter Symbol Typ Max Unit Maximumjunction-ambient A(t<10s) RθJA 65 90 ºC/W Maximumjunction-ambient A RθJA 85 125 ºC/W Maximumjunction-Lead C RθJL 43 60 ºC/W 2of5 Rev1.1JAN2014

-2.0A，-20V P-CHANNELMOSFETKIA SEMICONDUCTORS 3423KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=-250μA -20 - - V Zerogatevoltagedraincurrent IDSS VDS=-16V,V GS=0V - - -0.5 μA Gate-bodyleakagecurrent IGSS VGS=+10V,V DS=0V - - +1 μAVGS=+12V,V DS=0V - - +10 Gatethresholdvoltage VGS(th) VDS=VGS,I D=-250μA -0.7 -0.9 -1.4 V Onstatedraincurrent ID(on) VGS=-4.5V,V DS=-5V -8 - - A Staticdrain-sourceon-resistance RDS(on) VGS=-10V,ID=-2.0A - 76 92 mΩVGS=-4.5V,ID=-2.0A - 94 118 VGS=-2.5V,ID=-1.0A - 128 166 Forwardtransconductance gfs VDS=-5.0V,I D=-2A - 6.8 - S Diodeforwardvoltage VSD VGS=0V,IS=-1A -1 -0.78 - V Maximumbody-diodecontinuouscurrent IS - - -1.8 A Inputcapacitance Ciss VDS=-10V,VGS=0V, f=1MHz - 512 620 pFOutputcapacitance Coss - 77 - Reversetransfercapacitance Crss - 62 - Gateresistance Rg VDS=0V, VGS=0V,f=1MHz - 9.2 13 Ω Totalgatecharge Qg VDS=-10V,V GS=-4.5V ID =-2.0A - 5.5 6.6 nCGate-sourcecharge Qgs - 0.8 - Gate-draincharge Qgd - 1.9 - Turn-ondelaytime td(on) VDS=-10V,R L=5Ω,, RG=3Ω,V GS=-10V - 5 - nsRisetime tr - 6.7 - Turn-offdelaytime td(off) - 28 - Falltime tf - 13.5 - Reverserecoverytime trr IF=-2A,dI/dt=100A/μs, - 9.8 12 nS Reverserecoverycharge Qrr - 2.7 - nC Note:A.ThevalueofR θJA ismeasuredwiththedevicemountedon1in 2 FR-4boardwith2oz.Copper,inastill airenvironmentwithT A=25℃.Thevalueinanygivenapplicationdependsontheuser ’sspecific boarddesign.Thecurrentratingisbasedonthet< 10sthermalresistancerating. B.Repetitiverating,pulsewidthlimitedbyjunctiontemperature. C.TheR θJA thesumofthethermalinpedencefromjunctiontoleadR Θjl andleadtoambient. D.ThestaticcharacteristicsinFigures1to6,12,14areobtainedusing80 μspulses,dutycycle0.5% max. E.Thesetestsareperformedwiththedevicemountedon1in 2 FR-4boardwith2oz.Copper,inastill airenvironmentwithT A=25℃.TheSOAcurveprovidesasinglepulserating. F.Themaximumcurrentratingislimitedbybond-wires. 3of5 Rev1.1JAN2014

-2.0A，-20V P-CHANNELMOSFETKIA SEMICONDUCTORS 3423KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms

-2.0A，-20V P-CHANNELMOSFETKIA SEMICONDUCTORS 3423KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4of5 Rev1.1JAN2014

-2.0A，-20V P-CHANNELMOSFETKIA SEMICONDUCTORS 3423KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014