3409 KIA
Document overview
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Technical content
-2.6A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3409KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA3409usesadvancedtrenchtechnologytoprovideexcellentR DS(on) andlowgate charge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductKIA3409 isPb-free(meetsROHS&Sony259specifications). 2.Features n VDS(V)=-30V n ID=-2.6A n RDS(on)<130mΩ(VGS=-10V,ID=-2.6A) n RDS(on)<200mΩ(VGS=-4.5V,ID=-2.0A) 3.Symbol 1of5 Rev1.1JAN2014 Pin Function
1 Gate
2 Source
3 Drain
-2.6A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3409KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDS -30 V Gate-sourcevoltage VGS +20 V Continuousdraincurrent A TA=25ºC ID -2.6 ATA=70ºC -2.2 Pulseddraincurrent B IDM -20 A Totalpowerdissipation A TA=25 ºC PD 1.4 W TA=70ºC 1 W Junctionandstoragetemperaturerange TJ, TSTG -55to150 ºC 5. Thermalcharacteristics Parameter Symbol Typ Max Unit Maximumjunction-ambient A(t<10s) RθJA 70 90 ºC/W Maximumjunction-ambient A RθJA 100 125 ºC/W Maximumjunction-Lead C RθJL 63 80 ºC/W 2of5 Rev1.1JAN2014
-2.6A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3409KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=-250μA -30 - - V Zerogatevoltagedraincurrent IDSS VDS=-24V,V GS=0V - - -1 μA TJ=55°C - - -5 Gate-bodyleakagecurrent IGSS VGS=+20V,V DS=0V - - +100 nA Gatethresholdvoltage VGS(th) VDS=VGS,I D=-250μA -0.8 -1.9 -3 V Onstatedraincurrent ID(on) VGS=-4.5V,V DS=-5V -5 - - A Staticdrain-sourceon-resistance RDS(on) VGS=-10V,ID=-2.6A - 97 130 mΩTJ=125°C 135 150 VGS=-4.5V,ID=-2.0A - 166 200 Forwardtransconductance gfs VDS=-5.0V,I D=-2.5A 3 3.8 - S Diodeforwardvoltage VSD VGS=0V,IS=-1A - -0.82 -1.0 V Maximumbody-diodecontinuouscurrent IS - - -2.0 A Inputcapacitance Ciss VDS=-15V,VGS=0V, f=1MHz - 302 370 pFOutputcapacitance Coss - 50.3 - Reversetransfercapacitance Crss - 37.8 53 Gateresistance Rg VDS=0V, VGS=0V,f=1MHz 6 12 18 Ω Totalgatecharge(10V) Qg(10) VDS=-15V,V GS=-10V ID =-2.6A - 6.8 9 nC Totalgatecharge(4.5V) Qg(4.5) 2.4 3.1 Gate-sourcecharge Qgs - 1.6 - Gate-draincharge Qgd - 0.95 - Turn-ondelaytime td(on) VDS=-15V,R L=5.8Ω,, RG=3Ω,V GS=-10V - 7.5 - ns Risetime tr - 3.2 - Turn-offdelaytime td(off) - 17 - Falltime tf - 6.8 - Reverserecoverytime trr IF=-2.6A,dI/dt=100A/μs, - 16.8 22 nS Reverserecoverycharge Qrr - 10 - nC 3of5 Rev1.1JAN2014
-2.6A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3409KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014
-2.6A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3409KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014