3407 KIA
Document overview
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Technical content
-4.1A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3407KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA3407usesadvancedtrenchtechnologytoprovideexcellentR DS(on),lowgate charge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductKIA3407 isPb-free(meetsROHS&Sony259specifications).KIA3407isaGreenProductorderingoption. 2.Features n VDS(V)=-30V n ID=-4.1A n RDS(on)<60mΩ(VGS=-10V,ID=-4.1A) n RDS(on)<90mΩ(VGS=-4.5V,ID=-3.0A) 3.Symbol 1of5 Rev1.1JAN2014 Pin Function
1 Gate
2 Source
3 Drain
-4.1A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3407KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDS -30 V Gate-sourcevoltage VGS +20 V Continuousdraincurrent A TA=25ºC ID -4.1 ATA=70ºC -3.5 Pulseddraincurrent B IDM -20 A Totalpowerdissipation A TA=25 ºC PD 1.4 W TA=70ºC 1 W Junctionandstoragetemperaturerange TJ, TSTG -55to150 ºC 5. Thermalcharacteristics Parameter Symbol Typ Max Unit Maximumjunction-ambient A(t<10s) RθJA 65 90 ºC/W Maximumjunction-ambient A RθJA 85 125 ºC/W Maximumjunction-Lead C RθJL 43 60 ºC/W 2of5 Rev1.1JAN2014
-4.1A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3407KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=-250μA -30 - - V Zerogatevoltagedraincurrent IDSS VDS=-24V,V GS=0V - - -1 μA TJ=55°C - - -5 Gate-bodyleakagecurrent IGSS VGS=+20V,V DS=0V - - +100 nA Gatethresholdvoltage VGS(th) VDS=VGS,I D=-250μA -1 -1.8 -3 V Onstatedraincurrent ID(on) VGS=-4.5V,V DS=-5V -10 - - A Staticdrain-sourceon-resistance RDS(on) VGS=-10V,ID=-4.1A - - 60 mΩ VGS=-4.5V,ID=-3.0A - - 90 Forwardtransconductance gfs VDS=-5.0V,I D=-4.0A 5.5 8.2 - S Diodeforwardvoltage VSD VGS=0V,IS=-1A - -0.77 -1.0 V Maximumbody-diodecontinuouscurrent IS - - -2.2 A Inputcapacitance Ciss VDS=-15V,VGS=0V, f=1MHz - 700 840 pFOutputcapacitance Coss - 120 - Reversetransfercapacitance Crss - 75 - Gateresistance Rg VDS=0V, VGS=0V,f=1MHz - 10 15 Ω Totalgatecharge(10V) Qg VDS=-15V,V GS=-4.5V ID =-4.0A - 14.3 18 nC Totalgatecharge(4.5V) Qg 7 Gate-sourcecharge Qgs - 3.1 - Gate-draincharge Qgd - 3 - Turn-ondelaytime td(on) VDS=-15V,R L=3.6Ω,, RG=3Ω,V GS=-10V - 8.6 - ns Risetime tr - 5 - Turn-offdelaytime td(off) - 28.2 - Falltime tf - 13.5 - Reverserecoverytime trr IF=-4A,dI/dt=100A/μs, - 27 36 nS Reverserecoverycharge Qrr - 15 - nC 3of5 Rev1.1JAN2014
-4.1A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3407KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014
-4.1A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3407KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014