3402 KIA

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

4.0A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3402KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA3402usesadvancedtrenchtechnologytoprovideexcellentR DS(on),lowgatecharge andoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWM applications.KIA3402(GreenProduct)isofferedinalead-freepackage. 2.Features n VDS(V)=30V n ID=4.0A n RDS(on)<70mΩ(VGS=10V,ID=4.0A) n RDS(on)<75mΩ(VGS=4.5V,ID=2.3A) n RDS(on)<105mΩ(VGS=2.5V,ID=1.5A) 3.Symbol 1of5 Rev1.1JAN2014 Pin Function

1 Gate

2 Source

3 Drain

4.0A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3402KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDS 30 V Gate-sourcevoltage VGS +12 V Continuousdraincurrent A TA=25ºC ID 4.0 A TA=70ºC 3.4 Pulseddraincurrent B IDM 15 A Totalpowerdissipation A TA=25 ºC PD 1.4 W TA=70ºC 1 W Junctionandstoragetemperaturerange TJ, TSTG -55to150 ºC 5. Thermalcharacteristics Parameter Symbol Typ Max Unit Maximumjunction-ambient A(t<10s) RθJA 70 90 ºC/W Maximumjunction-ambient A RθJA 100 125 ºC/W Maximumjunction-Lead C RθJL 63 80 ºC/W 2of5 Rev1.1JAN2014

4.0A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3402KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 30 - - V Zerogatevoltagedraincurrent IDSS VDS=24V,V GS=0V - - 1 μA Gate-bodyleakagecurrent IGSS VGS=+12V,V DS=0V - - 100 nA Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 0.8 1 1.6 V Onstatedraincurrent ID(on) VGS=4.5V,V DS=5V 10 - - A Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=4.0A - - 70 mΩVGS=4.5V,ID=2.3A - - 75 VGS=2.5V,ID=1.5A - - 105 Forwardtransconductance gfs VDS=5.0V,I D=4.0A - 8.0 - S Diodeforwardvoltage VSD VGS=0V,IS=1A - 0.8 1.2 V Maximumbody-diodecontinuouscurrent IS - - 2.5 A Inputcapacitance Ciss VDS=15V,VGS=0V, f=1MHz - 390 - pFOutputcapacitance Coss - 54.5 - Reversetransfercapacitance Crss - 41 - Gateresistance Rg VDS=0V, VGS=0V,f=1MHz - 3 - Ω Totalgatecharge Qg VDS=15V,V GS=4.5V ID =4.0A - 4.34 - nCGate-sourcecharge Qgs - 0.6 - Gate-draincharge Qgd - 1.38 - Turn-ondelaytime td(on) VDS=15V,R L=3.75Ω,, RG=6Ω,V GS=10V - 3.3 - nsRisetime tr - 1 - Turn-offdelaytime td(off) - 21.7 - Falltime tf - 2.1 - Reverserecoverytime trr IF=4.0A,dI/dt=100A/μs, - 12 - nS Reverserecoverycharge Qrr - 6.3 - nC Note:A.ThevalueofR θJA ismeasuredwiththedevicemountedon1in 2 FR-4boardwith2oz.Copper,inastill airenvironmentwithT A=25℃.Thevalueinanygivenapplicationdependsontheuser ’sspecific boarddesign.Thecurrentratingisbasedonthet< 10sthermalresistancerating. B.Repetitiverating,pulsewidthlimitedbyjunctiontemperature. C.TheR θJA thesumofthethermalinpedencefromjunctiontoleadR Θjl andleadtoambient. D.ThestaticcharacteristicsinFigures1to6,12,14areobtainedusing80 μspulses,dutycycle0.5% max. E.Thesetestsareperformedwiththedevicemountedon1in 2 FR-4boardwith2oz.Copper,inastill airenvironmentwithT A=25℃.TheSOAcurveprovidesasinglepulserating. 3of5 Rev1.1JAN2014

4.0A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3402KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014

4.0A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3402KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014