3401 KIA
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Technical content
-4.0A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3401KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA3401usesadvancedtrenchtechnologytoprovideexcellentR DS(on),lowgatecharge andoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWM applications.StandardProductKIA3401isPb-free(meetsROHS&Sony259specifications).KIA3401isa GreenProductorderingoption. 2.Features n VDS(V)=-30V n ID=-4.0A n RDS(on)<60mΩ(VGS=-10V,ID=-4.0A) n RDS(on)<70mΩ(VGS=-4.5V,ID=-3.0A) n RDS(on)<100mΩ(VGS=-2.5V,ID=-1.2A) 3.Symbol 1of5 Rev1.1JAN2014 Pin Function
1 Gate
2 Source
3 Drain
-4.0A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3401KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDS -30 V Gate-sourcevoltage VGS +12 V Continuousdraincurrent A TA=25ºC ID -4.0 ATA=70ºC -3.5 Pulseddraincurrent B IDM -30 A Totalpowerdissipation A TA=25 ºC PD 1.4 W TA=70ºC 1 W Junctionandstoragetemperaturerange TJ, TSTG -55to150 ºC 5. Thermalcharacteristics Parameter Symbol Typ Max Unit Maximumjunction-ambient A(t<10s) RθJA 65 90 ºC/W Maximumjunction-ambient A RθJA 85 125 ºC/W Maximumjunction-Lead C RθJL 43 60 ºC/W 2of5 Rev1.1JAN2014
-4.0A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3401KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=-250μA -30 - - V Zerogatevoltagedraincurrent IDSS VDS=-24V,V GS=0V - - -1 μA Gate-bodyleakagecurrent IGSS VGS=+12V,V DS=0V - - +100 nA Gatethresholdvoltage VGS(th) VDS=VGS,I D=-250μA -0.7 -1 -1.3 V Onstatedraincurrent ID(on) VGS=-4.5V,V DS=-5V -25 - - A Staticdrain-sourceon-resistance RDS(on) VGS=-10V,ID=-4.0A - 50 60 mΩVGS=-4.5V,ID=-3.0A - 60 70 VGS=-2.5V,ID=-1.2A - 85 100 Forwardtransconductance gfs VDS=-5.0V,I D=-5.0A 7 11 - S Diodeforwardvoltage VSD VGS=0V,IS=-1A - - -1.2 V Maximumbody-diodecontinuouscurrent IS - - -2.2 A Inputcapacitance Ciss VDS=-15V,VGS=0V, f=1MHz - 954 - pFOutputcapacitance Coss - 115 - Reversetransfercapacitance Crss - 77 - Gateresistance Rg VDS=0V, VGS=0V,f=1MHz - 6 - Ω Totalgatecharge Qg VDS=-15V,V GS=-4.5V ID =-4.0A - 9.4 - nCGate-sourcecharge Qgs - 2.0 - Gate-draincharge Qgd - 3..0 - Turn-ondelaytime td(on) VDS=-15V,R L=3.6Ω,, RG=6Ω,V GS=-10V - 6.3 - nsRisetime tr - 3.2 - Turn-offdelaytime td(off) - 38.2 - Falltime tf - 12 - Reverserecoverytime trr IF=-4A,dI/dt=100A/μs, - 20.2 - nS Reverserecoverycharge Qrr - 11.2 - nC Note:A.ThevalueofR θJA ismeasuredwiththedevicemountedon1in 2 FR-4boardwith2oz.Copper,inastill airenvironmentwithT A=25℃.Thevalueinanygivenapplicationdependsontheuser ’sspecific boarddesign.Thecurrentratingisbasedonthet< 10sthermalresistancerating. B.Repetitiverating,pulsewidthlimitedbyjunctiontemperature. C.TheR θJA thesumofthethermalinpedencefromjunctiontoleadR Θjl andleadtoambient. D.ThestaticcharacteristicsinFigures1to6,12,14areobtainedusing80 μspulses,dutycycle0.5% max. E.Thesetestsareperformedwiththedevicemountedon1in 2 FR-4boardwith2oz.Copper,inastill airenvironmentwithT A=25℃.TheSOAcurveprovidesasinglepulserating. 3of5 Rev1.1JAN2014
-4.0A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3401KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014
-4.0A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS 3401KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014