3400 KIA

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4.8A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3400KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA3400usesadvancedtrenchtechnologytoprovideexcellentR DS(on),lowgatecharge andoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWM applications.StandardProductKIA3400isPb-free(meetsROHS&Sony259specifications).KIA3400isa GreenProductorderingoption.KIA3400iselectricallyidentical. 2.Features n VDS(V)=30V n ID=4.8A(VGS=10V) n RDS(on)<34mΩ(VGS=10V,ID=4.8A) n RDS(on)<40mΩ(VGS=4.5V,ID=4.0A) n RDS(on)<56mΩ(VGS=2.5V,ID=3.5A) 3.Symbol 1of5 Rev1.1JAN2014 Pin Function

1 Gate

2 Source

3 Drain

4.8A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3400KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDS 30 V Gate-sourcevoltage VGS +12 V Continuousdraincurrent A TA=25ºC ID 4.8 A Pulseddraincurrent B IDM 30 A Totalpowerdissipation A TA=25 ºC PD 1.4 W TA=70ºC 1 W Junctionandstoragetemperaturerange TJ, TSTG -55to150 ºC 5. Thermalcharacteristics Parameter Symbol Typ Max Unit Maximumjunction-ambient A(t<10s) RθJA 65 90 ºC/W Maximumjunction-ambient A RθJA 85 125 ºC/W Maximumjunction-Lead C RθJL 43 60 ºC/W 2of5 Rev1.1JAN2014

4.8A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3400KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 30 - - V Zerogatevoltagedraincurrent IDSS VDS=25V,V GS=0V - - 1 μA Gate-bodyleakagecurrent IGSS VGS=+12V,V DS=0V - - 100 nA Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 0.6 - - V Onstatedraincurrent ID(on) VGS=4.5V,V DS=5V 30 - - A Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=4.8A - - 34 mΩVGS=4.5V,ID=4.0A - - 40 VGS=2.5V,ID=3.5A - - 56 Forwardtransconductance gfs VDS=5V,I D=4.8A 10 15 - S Diodeforwardvoltage VSD VGS=0V,IS=1A - 0.71 1.2 V Maximumbody-diodecontinuouscurrent IS - - 2.5 A Inputcapacitance Ciss VDS=15V,VGS=0V, f=1MHz - 823 1030 pFOutputcapacitance Coss - 99 - Reversetransfercapacitance Crss - 77 - Gateresistance Rg VDS=0V, VGS=0V,f=1MHz - 1.2 3.6 Ω Totalgatecharge Qg VDS=15V,V GS=4.5V ID =5.8A - 9.7 12 nCGate-sourcecharge Qgs - 1.6 - Gate-draincharge Qgd - 3.1 - Turn-ondelaytime td(on) VDS=15V,R L=2.7Ω,, RG=3Ω,V GS=10V - 3.3 5 nsRisetime tr - 4.8 7 Turn-offdelaytime td(off) - 26.3 40 Falltime tf - 4.1 6 Reverserecoverytime trr IF=5A,dI/dt=100A/μs, - 16 20 nS Reverserecoverycharge Qrr - 8.9 12’ nC Note:A.ThevalueofR θJA ismeasuredwiththedevicemountedon1in 2 FR-4boardwith2oz.Copper,inastill airenvironmentwithT A=25℃.Thevalueinanygivenapplicationdependsontheuser ’sspecific boarddesign.Thecurrentratingisbasedonthet< 10sthermalresistancerating. B.Repetitiverating,pulsewidthlimitedbyjunctiontemperature. C.TheR θJA thesumofthethermalinpedencefromjunctiontoleadR Θjl andleadtoambient. D.ThestaticcharacteristicsinFigures1to6,12,14areobtainedusing80 μspulses,dutycycle0.5% max. E.Thesetestsareperformedwiththedevicemountedon1in 2 FR-4boardwith2oz.Copper,inastill airenvironmentwithT A=25℃.TheSOAcurveprovidesasinglepulserating. 3of5 Rev1.1JAN2014

4.8A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3400KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014

4.8A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3400KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014

4.8A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3400KIA SEMICONDUCTORS KIA SEMICONDUCTORS