3370PT NELLSEMI

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Metal case with ceramic insulator lnternational standard case Nell’s DX-type Capsule Compliant to RoHS TYPICAL APPLICATIONS SEMICONDUCTOR RoHS RoHS Phase Control Thyristors Nell High Power Products Low on-state and switching losses 3370PT Series (Hockey PUK Version), 3370A DC and AC motor controls Controlled DC power supplies AC controllers PRODUCT SUMMARY IT(AV) 3370A MAJOR RATINGS AND CHARACTERISTICS PARAMETER UNIT VVDRM/VRRM ITSM IT(RMS) 2I t Tq 2Ka s A TEST CONDITIONS A 8100 1200 to 1600 49000 51300 50 HZ 60 HZ 50 HZ 60 HZ Typical ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VOLTAGETYPE NUMBER CODE V /V , MAXIMUM REPETITIVEDRM RRM PEAK AND OFF-STATE VOLTAGE V V , MAXIMUM NON-REPETITIVERSM PEAK REVERSE VOLTAGE V l /l , MAXIMUMDRM RRM AT T = T MAXIMUMJ J mA 1200 1400 1600 1300 1500 1700 200 Center amplifying gate 3370 5290 10922 12005 VALUES 4070 Page 1 of 7www.nellsemi.com IT(AV) 200 A µs Double side cooled, single phase, 50Hz, 180° half-sine wave T =70°Chs Ths=25°C 3370PTxxDX0 TJ ºC-40 to 125 Designed and qualified for industrial level Nell’s DX-type Capsule Ths=70°C Double side cooled, single phase, 50Hz, 180° half-sine wave T =55°Chs

PARAMETER SYMBOL UNITTEST CONDITIONS VALUES Maximum average current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled A 70(55) ºC Maximum peak, one cycle non-reptitive surge current ITSM t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms 8100 49000 51300 41160 43090 12005 10922 8471 2kA s A 7706 t = 0.1 to 10 ms, no voltage reapplied Maximum l²t for fusing 120050 V0.94 3370(2300) VTM l =4000A, pk T =T maximum t = 10 ms sine pulseJ J , p 0.066 V VT(TO) rt mΩ 2I √t 2kA √sMaximum l²√t for fusing No voltage reapplied 100%VRRM reapplied No voltage reapplied 100%VRRM reapplied Sinusoidal half wave, initial T = T maximum J J IT(RMS) lL lH Typical latching current Maximum holding current Maximum on-state voltage Maximum on-state slope resistance Maximum threshold voltage Maximum RMS on-state current DC at 25°C heatsink temperature double side cooled l = 4200A~12500A, T = T maximumT J J T = 25°C, anode supply 12V resistive loadJ A 1.20 mA 300 1000 2I t SWITCHING PARAMETER SYMBOL UNITTEST CONDITIONS VALUES Maximum non-repetitive rate of rise of turned-on current dl/dt l = l , TM T(AV) = μ ,T =T maximum, f = 50Hz J J V ≤ 66.7% V , I = 2A,D DRM FG t 0.3 s r A/µs td 200 2.0 µs V = 0.4 V , I = 2A, t = 0.3µs, T = 25°CD DRM FG Jr tq Maximum delay time (Gate turn-on delay time ) Typical turn-off time QrrReverse recovery charge (Typical) I = 2000A, , dl/dt = -12.5 A/µs.TM V = 100VR T =T maximumJ J , dV/dt = 50 V/µs, V ≤ 0.67 V D DRM 200 µC BLOCKING PARAMETER SYMBOL UNITTEST CONDITIONS VALUES Minimum critical rate of rise of off-state voltage dV/dt T =T maximum, linear to 67% rated VJ J DRM V/µs1000 lRRM,Maximum peak reverse and off-state leakage current T =T maximum, rated V /V appliedJ J DRM RRM 200 mAlDRM, 3370PT Series 2800I = 2000A, , V = 100VTM R di/dt = -12.5 A/µs T =T maximum , J J Page 2 of 7www.nellsemi.com

PARAMETER SYMBOL UNITTEST CONDITIONS VALUES PGM IGT V IGM A Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger PG(AV) +VGM -VGM VGT lGD VGD 0.25 T = T maximum, t ≤ 5 msJ J p T = T maximum, f = 50 Hz, d% = 50 J J T = T maximum, t ≤ 5 msJ J p T = T maximum, t ≤ 5 msJ J p T = -40°CJ T = 25°CJ T = 125°CJ T = -40°CJ T = 25°CJ T = 125°CJ T = T maximumJ J Maximum required gate current/voltage are the lowest value which will trigger all units 12V anode to cathode applied Maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated V anode to cathode appliedDRM TYP. MAX. 200 250 2.5 1.8 1.1 mA V mA V W THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL UNITTEST CONDITIONS VALUES ºC -40 to 125 -40 to 150 0.020 0.010 0.006 0.003 50000 (5100) 930 Nell’s DX-type Capsule g (kg) N K/W Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink Mounting force, ±10% Approximate weight Case style TJ Tstg Rth(J-hs) Rth(C-hs) DC operation single side cooled DC operation single side cooled DC operation double side cooled DC operation double side cooled RthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 120° 90° 60° 30°

  • The table above shows the increment of thermal resistance R when devices thJ-hs operate at different conduction angles than DC Note UNITS TEST CONDUCTIONS K/WT = T maximumJ J SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 0.003 0.004 0.005 0.007 0.012 0.003 0.004 0.005 0.007 0.012 0.002 0.002 0.004 0.004 0.005 0.005 0.007 0.007 0.012 0.012 3370PT Series 500 100 150 Page 3 of 7www.nellsemi.com

Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics Average on-state current (A) Average on-state current (A) Fig.3 Current ratings characteristics Fig.4 Current ratings characteristics Maximum allowable heatsink temperature(˚C) Maximum allowable heatsink temperature(˚C) Maximum allowable heatsink temperature(˚C) 130 120 110 100 130 120 110 100 Average on-state current (A) Average on-state current (A) 0 1000 2000 3000 0 1000 2000 3000 4000 Fig.5 On-state power loss characteristics Maximum average on-state power loss(W) Fig.6 On-state power loss characteristics 6000 5000 4000 3000 2000 1000 0 1000 2000 Average on-state current (A) Average on-state current (A) 8000 7000 6000 5000 4000 3000 2000 1000 0 1000 2000 3000 6000 Maximum average on-state power loss(W) 4000 (Double side cooled) R (DC) = 0.01 K/WthJ-hs Conduction Angle 5000 6000 (Double side cooled) R (DC) = 0.01 K/WthJ-hs Conduction Period 30° 60° 90° 120° 180° 4000 120° 180° 30° 60° 90° DC T = 125°CJ 3370PT Series 30° 60° 90° 120° 180° 30° 60° 90° 120° 180° DC 3000 4000 RMS Limit Conduction Angle T = 125°CJ 5000 Conduction Period Page 4 of 7www.nellsemi.com RMS Limit 100 0 1000 2000 3000 Maximum allowable heatsink temperature(˚C) 30° 90° 110 120 130 120 0 400 800 1200 1600 4000 120° DC 100 110 130 (Single side cooled) R (DC) = 0.02 K/WthJ-hs Conduction Angle 90° 120° 180° 30° 60° 2000 2400 (Single side cooled) R (DC) = 0.02 K/WthJ-hs Conduction Period 60° 180°

Fig.7 Maximum non-repetitive surge current single and double side cooled Fig.8 Maximum non-repetitive surge current single and double side cooled Peak half sine wave on-state current(A) Peak half sine wave on-state current(A) Instantaneous on-state current (A) Fig.9 Maximum on-state voltage drop characteristcs Instantaneous on-state voltage (V) Number of equal amplitude half cycle current pulses (N) Pulse train duration (S) Fig.10 Thermal lmpedance Z characteristicsth(J-hs) Transient thermal lmpedance Z (K/W)th(J-hs) Square wave pulse duration (s) 45000 40000 35000 30000 25000 20000 15000 1 10 100 45000 40000 35000 30000 25000 20000 15000 55000 0.01 0.1 1 20000 1000 0 0.5 0.05 0.01 0.001 0.001 0.01 0.1 1 10 100 initial T = 125°CJ @ 60Hz 0.0083 s @ 50Hz 0.0100 s At Any Rated Load Condition And With Rated V Applied Following SurgeRRM 50000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained No Voltage Reapplied Rated V ReappliedRRM Initial T = 125°C, @50HzJ 1.0 2.5 Steady State Value R = 0.020 K/Wth(J-hs) (Single Side Cooled) R = 0.010 K/Wth(J-hs) (Double Side Cooled) (DC Operation) 3370PT Series 10000 5000 1.5 2.0 Page 5 of 7www.nellsemi.com T = 125°CJ T = 25°CJ

Fig.11 Gate trigger characteristics Fig.12 Gate trigger characteristics 0 0 0.5 1.0 Gate voltage, V (V)G 00 2 4 6 8 12 Gate current, l (A)G 3370PT Series -40°C lGTm in DC = PG(AV)6 Gate voltage, V (V)G Gate current, l (A)G 25°C 125°C VGTmin DC = PG(AV) 10ms VGM 500µs 1ms ORDERING INFORMATION TABLE - Maximum average on-state current I , 3370 for 3370A T(AV) - PT = Phase control thyristor Device code PT 03370 16 DX 1 2 3 4 5 - Voltage code, cold × 100 = V RRM/VRRM - DX = Nell’s DX-type Capsule - Terminal type, “0” for eyelet Page 6 of 7www.nellsemi.com IGM

NELL’S DX-type Capsule All dimensions in millimeters K G A 3370PT Series Ø93.5 Max. Ø63.00±0.10 Ø63.00±0.10 Ø101.5 Max. Ø3.50 x 2.5 Deep (Both ends) Max. 6.20 4.70 20°±5° 0.7 Min. 0.7 Min. 26.0±0.5 Pin receptacle AMP. 60598-1 Page 7 of 7www.nellsemi.com