3308A KIA
Document overview
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Technical content
80A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3308AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(ON)=6.2mΩ@VGS=10V n Leadfreeandgreendeviceavailable n LowRds-ontominimizeconductiveloss n Highavalanchecurrent 2.Applications n Powersupply n DC-DCconverters 3. Pinconfiguration 1of7 Rev1.2.Nov.2017 Pin Function
1 Gate
2 Drain
3 Source
80A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3308AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings *Draincurrentlimitedbymaximumjunctiontemperature. 5. Thermalcharacteristics 2of7 Rev1.2Nov.2017 Parameter Symbol Maximum UnitsTO-252 TO-263 TO-247 Drain-sourcevoltage VDSS 80 V Gate-sourcevoltage VGSS +25 V Continuousdraincurrent TC=25ºC ID3 80* 80 80 A TC=100ºC 70* 70 70 A Pulsedraincurrent TC=25ºC IDP4 340 A Avalanchecurrent IAS5 20 A Avalancheenergy EAS5 410 mJ Maximumpowerdissipation TC=25ºC PD 120 240 288 W TC=100ºC 60 100 144 W Junction&storagetemperaturerange TJ,TSTG -55～175 ºC Parameter Symbol Typical UnitsTO-252 TO-263 TO-247 Thermalresistance-junctiontocase Rθjc 1.04 0.52 0.44 ºC/W Thermalresistance-junctiontoambient Rθja 55
80A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3308AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol Conditions Min Typ Max Unit Staticcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,IDS=250μA 80 - - V Zerogatevoltagedraincurrent IDSS VDS=64V,VGS=0V - - 1 μA TJ=125ºC - - 100 Gatethresholdvoltage VGS(th) VDS=VGS,I DS=250μA 2 3 4 V Gateleakagecurrent IGSS VGS=+25V,VDS=0V - - +100 nA Drain-sourceon-stateresistance RDS(on)1 VGS=10V,IDS=30A - 6.2 9 mΩ Diodecharacteristics Diodeforwardvoltage VSD1 ISD=40A,VGS=0V - - 1.3 V Diodecontinuousforwardcurrent IS3 - - 80 A Reverserecoverytime trr IF=40A,dl/dt=100A/μs - 25 - nS Reverserecoverycharge Qrr - 18.5 - nC Dynamiccharacteristics 2 Gateresistance RG VGS=0V,V DS=0V,F=1MHz - 1.3 - Ω Inputcapacitance Ciss VGS=0V,V DS=25V, F=1.0MHz - 3110 - pFOutputcapacitance Coss - 445 - Reversetransfercapacitance Crss - 270 - Turn-ondelaytime td(ON) VDD=37.5V,ID=40A, VGS=10V,RG=6.8Ω - 20.4 - nS Turn-onrisetime tr - 63 - Turn-offdelaytime td(OFF) 67 - Turn-offfalltime tf - 43 - Gatechargecharacteristics 2 Totalgatecharge Qg VDS=37.5V,V GS=10V, ID=40A, - 76 - nCGate-sourcecharge Qgs - 9.5 - Gate-draincharge Qgd - 40 - Note:1.Pulsetest;pulsewidth ≤300μs,dutycycle ≤2%. 2.Guaranteedbydesign,notsubjecttoproductiontesting. 3.Packagelimitationcurrentis50A.Calculatedcontinuouscurrentbasedonmaximumallowable junctiontemperature. 4.Repetitiverating,pulsewidthlimitedbymaxjunctiontemperature. 5.StartingT J=25ºC,L=1mH,I AS=40A. 3of7 Rev1.2Nov.2017
80A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3308AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of7 Rev1.2Nov.2017
80A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3308AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of7 Rev1.2Nov.2017
80A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3308AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of7 Rev1.2Nov.2017
80A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3308AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of7 Rev1.2Nov.2017