3103A KIA
Document overview
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Technical content
110A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3103AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(on)=1.9mΩ（typ.）@V GS=10V n LowOn-Resistance n FastSwitching n 100%AvalancheTested n RepetitiveAvalancheAlloweduptoTjmax n Lead-Free,RoHSCompliant 2.Features KIA3103Adesignedbythetrenchprocessingtechniquestoachieveextremelylowon-resistance. Additionalfeaturesofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedand improvedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficient andreliabledeviceforuseinMotorapplicationsandawidevarietyofotherapplications. 3. Pinconfiguration 1of5 Rev1.0Oct.2017 Pin Function
4 Gate
5,6,7,8 Drain 1,2,3 Source
110A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3103AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25ºC,unlessotherwisespecified) Parameter Symbol Ratings Units Drain-sourcevoltage VDSS 30 V Gate-sourcevoltage VGSS ±20 V Continuousdraincurrent@V GS=10V TC=25ºC ID 110 A TC=100ºC ID 70 A PulseddraincurrenttestedT C=25ºC 1 IDM 440 A Avalancheenergysinglepulse 2 EAS 361 mJ MaximumPowerdissipationT C=25ºC PD 62.5 W Maximumjunctiontemperature TJ 150 °C Storagetemperaturerange TSTG -55~+150 °C DiodecontinuousforwardcurrentT C=25ºC 1 IS 110 A 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-to-case θJC 2.0 ºC/W 2of5 Rev1.0Oct.2017
110A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3103AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TC=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit OffCharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 30 - - V Drain-to-sourceleakagecurrent IDSS VDS=24V,V GS=0V - - 1 μA TC=125ºC - - 100 μA Gate-to-sourceleakagecurrent IGSS VGS=20V,VDS=0V - - 100 nA VGS=-20V,VDS=0V - - -100 nA Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 1.0 1.8 2.5 V Staticdrain-sourceon-resistance 3 RDS(on) VGS=10V,ID=30A - 1.9 2.6 mΩ Staticdrain-sourceon-resistance 3 RDS(on) VGS=4.5V,ID=20A - 3.2 3.6 mΩ Dynamiccharacteristics Inputcapacitance Ciss VDS=20V,VGS=0V,f=1.0MHz - 3600 - pFOutputcapacitance Coss - 480 - Reversetransfercapacitance Crss 43 Gateresistance RG VGS=0V,V DS=0V,f=1MHz - 1 - Ω Totalgatecharge Qg VDS=15V,ID=20A,VGS=10V - 63 - nCGate-sourcecharge Qgs - 13 - Gate-drain(Miller)charge Qgd - 16 - Resistiveswitchingcharacteristics Turn-ondelaytime Td(ON) VDD=15V,ID=20A,VGS=10V, RG=3Ω - 15 - nSRisetime trise - 18 - Turn-offdelaytime Td(OFF) - 99 - Falltime tfall - 45 - Source-drainbodydiodecharacteristics TJ=25°C,unlessotherwisenotes Diodeforwardvoltage VSD VGS=0V,ISD=20A - 0.8 1.3 V Reverserecoverytime trr ISD=20A,diF/dt=100A/μs, TJ=25°C,V GS=0V - 32 - ns Reverserecoverycharge Qrr - 33 - nC Note: 1.Repetitiverating;pulsewidthlimitedbymax.junctiontemperature. 2.LimitedbyTJmax,startingT Jmax,=25°C,L=0.5mH,RG=25 Ω,IAS=38A,V GS=10V.Partnotrecommended foruseabovethisvalue. 3.Pulsewidth ≤300μs;dutycycle ≤2%. 3of5 Rev1.0Oct.2017
110A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3103AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicalcharacteristics 4of5 Rev1.0Oct.2017
110A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 3103AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.0Oct.2017