30TB40D KIA
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
30A，400VKIA SEMICONDUCTORS 30TB40D 1.Description FREDfromKIAutilizesadvancedprocessingtechniquestoachieveultrafastrecovery timesandhigherforwardcurrent.Itssoftrecoverycharacteristicsandhighreliabilitysuitforwideindustrial applications. 2.Features n Ultrafastrecoverytime n Lowforwardvoltage n Lowleakagecurrent n Lowrecoveryvoltage n Softrecoverycharacteristics n Highsurgecurrentcapability 3. Pinconfiguration 1of3 Rev1.0OCT2014 Pin(TO-3P-2) Function
1 Cathode
2 Anode
30A，400VKIA SEMICONDUCTORS 30TB40D 4. Maximumratings Parameter Symbol Rating Units Peakrepetitivereversevoltage DCblockingvoltage VRRM VR 400 V Averagerectifiedforwardcurrent Perdiode,T C =110 °C IF(AV) 30 A RMSforwardcurrent Perdiode,T C =110 °C IF 42 A Non-repetitive surgeforwardcurrent TJ=45°C,t=10ms,50Hz,sine IFSM 300 A Powerdissipation PD 156 W Operatingjunctiontemperatureandstorage temperaturerange TJ,Tstg -40to+150 ºC 5. Thermalcharacteristics Parameter Symbol Rating Unit Maximumthermalresistance,junction −to−case RθJC 0.8 ºC/W 6. Electricalcharacteristics Parameter Symbol Conditions Rating Unit Min Typ Max MaximumInstantaneousForwardVoltage VF MaximumInstantaneousReverseCurrent IR VR=400V - - 15 μA VR=400VT J=125°C - - 250 ReverseRecoveryTime trr IF=1A,V R=30V, diF/dt=-200A/μs - 27 - ns ReverseRecoveryTime trr VR=200V,I F=30A, diF/dt=-200A/μs, TJ=25°C - 50 - ns MaxReverseRecoveryCurrent IRRM - 5 - A ReverseRecoveryTime trr VR=200V,I F=30A, diF/dt=-200A/μs TJ=125°C - 100 - ns MaxReverseRecoveryCurrent IRRM - 11 - A 2of3 Rev1.0OCT2014
30A，400VKIA SEMICONDUCTORS 30TB40D 3of3 Rev1.0OCT2014