30N03B KIA
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
30A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 30N03BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA30N03BisthehighestperformancetrenchN-chMOSFETswithextremehigh celldensity,whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuckconverter applications.TheKIA30N03BmeettheRoHSandGreenProductrequirenment,100%EASguaranteedwith fullfunctionreliabilityapproved. 2.Features n RDS(on)=15mΩ@ VDS=30V n Avanced high cell density Trench technology n Super Low Gate Charge n Excellent Cdv/dt effect decline n 100%EAS Guaranteed n Green Device Available 3.Applications n HighFrequencyPoint-of-LoadSynchronousBuckConverterforMB/NB/UMPC/VGA n NetworkingDC-DCPowerSystem n LoadSwitch 4.Symbol 1of5 Rev1.1JAN2014 Pin Function
1 Gate
2 Drain
3 Source
30A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 30N03BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5. Absolutemaximumratings Parameter Symbol Rating Units Drain-sourcevoltage VDS 30 V Gate-sourcevoltage VGS +20 V Continuousdraincurrent, VGS @10V1 TC=25ºC ID 30 A TC=100ºC 18 A Pulseddraincurrent 2 IDM 60 A Singlepulseavalancheenergy 3 EAS 72 mJ Avalanchecurrent IAS 21 A Totalpowerdissipation 4 TC=25 ºC PD 25 W Operationjunctiontemperaturerange TJ -55to150 ºC Storagetemperaturerange TSTG -55to150 ºC 6. Thermalcharacteristics Parameter Symbol Typ Max Unit Thermalresistance,Junction-ambient(t< 10s)1 RθJA -- 25 ºC/W Thermalresistance,Junction-ambient （SteadyState ）1 RθJA -- 62 ºC/W Thermalresistance,Junction-case 1 RθJC -- 5 ºC/W 2of5 Rev1.1JAN2014
30A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 30N03BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Electricalcharacteristics (TJ=25°C,unlessotherwisenoted Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 30 - - V BVDSS temperaturecoefficient △BVDSS/△TJ Referenceto25 ºC, ID=1mA 0.023 V/°C Staticdrain-sourceon-resistance 2 RDS(on) VGS=10V,ID=10A 15 18 mΩ VGS=4.5V,ID=5A 22 30 Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 1.0 1.5 2.5 V VGS(th) temperaturecoefficient △VGS(th) -5.2 mV/°C Drain-sourceleakagecurrent IDSS VDS=24V,V GS=0V TJ=25°C 1 μA VDS=24V,V GS=0V TJ=55°C 5 μA Gate-sourceleakagecurrent IGSS VGS=+20V,V DS=0V +100 nA Forwardtransconductance gfs VDS=15V,I D=10A 10 S Gateresistance Rg VDS=24V, VGS=0V,f=1MHz 2.5 5 Ω Totalgatecharge(4.5V) Qg VDS=20V,V GS=4.5V ID =12A - 7.2 nCGate-sourcecharge Qgs 1.4 Gate-draincharge Qgd 2.2 Turn-ondelaytime td(on) VDD=12V,ID=5A, RG=3.3Ω,V GS=10V 4.1 nsRisetime tr 9.8 Turn-offdelaytime td(off) 15.5 Falltime tf 6.0 Inputcapacitance Ciss VDS=15V,VGS=0V, f=1MHz 572 pFOutputcapacitance Coss 81 Reversetransfercapacitance Crss 65 Singlepulseavalancheenergy 5 EAS VDD=25V,L=0.1mH, IAS=10A 16 mJ Continuoussourcecurrent 1,6 IS VG=V D==0V, Forcecurrent 30 A Pulsedsourcecurrent 2,6 ISM 60 A Diodeforwardvoltage 2 VSD VGS=0V,IS=15A,T J=25ºC 1.2 V Note:1.Thedatatestedbysurfacemountedona1inch 2 FR-4boardwith20Zcopper. 2.Thedatatestedbypulsed,pulsewidth< 300μs,dutycycle< 2% 3.TheEASdatashowsMax.rating.ThetestconditionisV DD=25V,V GS=10V,L=0.1mH,IAS=21A 4.Thepowerdissipationislimitedby150 °Cjunctiontemperature 5.TheMin,valueis100%EAStestedguarantee. 6.ThedataistheoreticallythesameasI D andI DM,inrealapplications,shouldbelimitedbytotal powerdissipation. 3of5 Rev1.1JAN2014
30A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 30N03BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014
30A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 30N03BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014