30ETU12 NELLSEMI

Document overview

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Technical content

Ultrafast Soft Recovery Diode

FEATURES

Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count

DESCRIPTION

VF at 30A at 25 °C IF(AV) 30 A trr (typical) TJ (maximum) Qrr 545 nC Anode 1 3 Cathode Base cathode TO-220AC Modified 30ETU12 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Cathode to anode voltage VR V Maximum continuous forward current I = 100 T ºCC ASingle pulse forward current IFSM 280 Maximum repetitive forward current IFRM 100 Operating junction and storage temperature range TJ, TStg ºC SEMICONDUCTOR 30ETU12 RoHS RoHS Available RoHS* COMPLIANT F Nell High Power Products 2.35 V 1200 - 55 to 175 38 ns 175 °C 30ETU12 is a state of the art ultrafast diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200V and 30A continuous current, the 30ETU12 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I )RRM and does not exhibit any tendency to “snap-off” during the t portion of recovery. The FRED features combineb to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED 30ETU12 is ideally suited for applications in power supplies and conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. recovery 30ATU12 Anode 1 3 Anode Base cathode TO-220AB Ver low lRRM Ver low Qrr = 25 T ºCC www.nellsemi.com Page 1 of 6 UNITSVALUES Planar FRED Chip 30A/1200V

THERMAL - MECHANICAL SPECIFICATIONS Lead temperature Tlead 0.063" from case (1.6 mm) for 10 s Thermal resistance, junction to case RthJC - K/WThermal resistance, junction to ambient RthJA Typical socket mount Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and gerased Weight Mounting torque 6 (5) - 12 (10) kgf . cm (lbf . in) Marking device Case style TO-220AC Modified g-2 °C300-- 80-- -0.4- oz.-0.07 ºC unless otherwise specified)= 25 PARAMET E R = 60 AIF µA --1200 1.40 pF36 ELECTRICAL SPECIFICATIONS (TJ Cathode to anode breakdown voltage VBR = 100 µAIR Maximum forward voltage = 30 AIF = 30 A, TI = 125 ºCF J Maximum reverse leakage current IRM Junction capacitance 2.35 ºC unless otherwise specified)= 25 ns 320 435 DYNAMIC RECOVERY CHARACTERISTICS PERLEG (TJ Reverse recovery time IF = 1.0 A, dI /dt = 100 A/µs, V =30 V, T = 25°CF R J 38 A nC 2100 545 Peak recovery current Reverse recovery charge trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 T = 125 ºCJ T = 125 ºCJ T = 125 ºCJ T = 25 ºCJ T = 25 ºCJ T = 25 ºCJ I = 30AF dI /dt = 200 A/µsF V = 800 VR VFM CT V = 200VR T = 150°C, V = V rated J R R V = V ratedR R I = 0.5A, I = 1.0A, I = 0.25A (RG#1 CKT)F R RR 52- 2.60 UNITSMAX.TYP.MIN. UNITSMAX.TYP.MIN. nH8Series inductance LS 500 -Measured lead to lead 5 mm from package body 0.80.5 Case style TO-220AB 30ETU12 30ATU12 www.nellsemi.com Page 2 of 6 TEST CONDITIONSSYMBOL PARAMET E R TEST CONDITIONSSYMBOL PARAMET E R TEST CONDITIONSSYMBOL UNITSMAX.TYP.MIN. SEMICONDUCTOR 30ETU12 RoHS RoHS Nell High Power Products 1.95 1.0

Fig.2 Forward current vs. forward voltage Fig.3 Reverse recovery time vs. current rate of change Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration Rectangular pulse duration (seconds) Thermal impedance, ZθJC (°C/W) Anode-to-cathode voltage, VF (V) Current rate of change, -di /dt F (A/μs) Forward current, I (F A) Reverse recovery time, trr (ns) Fig.4 Reverse recovery charge vs. current rate of change Fig 5. Reverse recovery current vs. current rate of change Current rate of change, -di /dt F (A/μs)Current rate of change, -di /dt F (A/μs) Reverse recovery charge, Qrr (nC) Reverse recovery current, IRRM (A) 600 800400 1200200 1000 543210 0 12001000800600400200 0 600 800400 1200200 1000 0.90 0.80 0.60 0.40 0.70 0.50 0.20 -510 -410 -310 -210 -110 1.0 200 180 160 140 120 100 500 400 300 200 100 600 5000 4000 3000 2000 1000 D=0.9 0.5 0.1 0.3 0.7 0.05 SINGLE PULSE 0.10 0.30 T =175°CJ T =125°CJ T =25°CJ T =-55°CJ T =125°CJ V =800VR 60A 15A 30A T =125°CJ V =800VR 60A 30A 15A T =125°CJ V =800VR 60A 30A 15A www.nellsemi.com Page 3 of 6 SEMICONDUCTOR 30ETU12 RoHS RoHS Nell High Power Products Note:PDM Duty Factor D =t /t1 2 Peak T = P xZ +TJ DM θJC C

30 E T U 12

  • Current rating (30 = 30A) 3 - TO-220AB or TO-220AC Modified Voltage R a t ing (12 = 1200 V)5 Ultrafast Recovery Single Diode Ordering Information Table Device code E = 2 pins A = 3 pins Fig.7 Maximum average forward current 200 Fig6. Dynamic parameters vs. junction temperature Junction temperature,TJ (°C) Dynamic parameters, Kf (Normalized to 1000A/µs) Case temperature (°C) l (A)F(AV) Fig.8 Junction capacitance vs. reverse voltage reverse voltage, VR (V) Junction capacitance, C (J pF) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 100 125 150 175755025 100 125 1500 75 200 180 160 140 120 100 Qrr trr IRRM trr Qrr 100 www.nellsemi.com Page 4 of 6 SEMICONDUCTOR 30ETU12 RoHS RoHS Nell High Power Products Duty cycle = 0.5 T =175°CJ vs. case temperature

Fig.9 Reverse recovery parameter test circuit Fig.10 Reverse recovery waveform and definitions www.nellsemi.com Page 5 of 6 SEMICONDUCTOR 30ETU12 RoHS RoHS Nell High Power Products

10.26 0.404 [ ] 9.98 0.393 [ ] Ø [0.153] 3.89 Ø [0.149]3.78 2.90 0.114 [ ] 2.59 0.102 [ ] 12.90 0.508 [ ] 12.50 0.492 [ ] 3.91 0.154 [ ] 3.40 0.134 [ ] 13.49 0.531 [ ] 13.08 0.515 [ ] 2.54 0.100 [ ] TYP 5.18 0.204 [ ] 4.98 0.196 [ ] 0.057 [1.45] 0.047 [1.19] 0.034 [0.86] 0.030 [0.76] Cathode 4.72 0.186 [ ] 4.42 0.174 [ ] 1.47 0.058 [ ] 1.19 0.047 [ ] 9.19 0.362 [ ] 8.99 0.354 [ ] 2.79 0.110 [ ] 2.51 0.099 [ ] 0.46 0.018 [ ] 0.36 0.014 [ ] 30ATU12 3 pins Anode 1 3 Anode Base cathode Cathode www.nellsemi.com Page 6 of 6 SEMICONDUCTOR 30ETU12 RoHS RoHS Nell High Power Products TO-220AC Modified Package Outline 30ETU12 2 pins Anode 1 3 Cathode Base cathode Anode Cathode 0.404 [10.26] 0.393 [9.98] Ø0.153 [3.89] Ø0.149 [3.78] 0.114 [2.90] 0.102 [2.59] 0.508 [12.90] 0.492 [12.50] 0.154 [3.91] 0.134 [3.40] 0.531 [13.49] 0.515 [13.08] 0.100 [2.54] TYP 0.204 [5.18] 0.196 [4.98] 0.057 [1.45] 0.047 [1.19] 0.034 [0.86] 0.030 [0.76] Cathode 0.186 [4.72] 0.174 [4.42] 0.058 [1.47] 0.047 [1.19] 0.362 [9.19] 0.354 [8.99] 0.110 [2.79] 0.099 [2.51] 0.018 [0.46] 0.014 [0.36]