30ETU06

30ETU06 NELLSEMI

Document overview

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Technical content

Ultrafast Soft Recovery Diode

FEATURES

Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count

DESCRIPTION

VF at 30A at 25 °C IF(AV) 30 A trr (typical) TJ (maximum) Qrr 130 nC dI(rec)M/dt Anode 1 3 Cathode Base cathode TO-220AC Modified 30ETU06 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage VR V Maximum continuous forward current I = 116 T ºCC ASingle pulse forward current IFSM 300 Maximum repetitive forward current IFRM 110 Maximum power dissipation = 25 T ºCC W Operating junction and storage temperature range TJ, TStg ºC SEMICONDUCTOR 30ETU06 RoHS RoHS Available RoHS* COMPLIANT F Nell High Power Products 1.7 V 600 145 - 55 to 175 25 ns 175 °C

260 A/μs

30ETU06 is a state of the art ultrafast diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600V and 30A continuous current, the 30ETU06 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I )RRM and does not exhibit any tendency to “snap-off” during the t portion of recovery. The FRED features combineb to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED 30ETU06 is ideally suited for applications in power supplies and conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. recovery 30ATU06 Anode 1 3 Anode Base cathode TO-220AB Ver low lRRM Ver low Qrr = 25 T ºCC = 100 T ºCC P D www.nellsemi.com Page 1 of 6 Planar FRED Chip 30A / 600V

THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature Tlead 0.063" from case (1.6 mm) for 10 s Thermal resistance, junction to case RthJC - K/WThermal resistance, junction to ambient RthJA Typical socket mount Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and gerased Weight Mounting torque 6 (5) - 12 (10) kgf . cm (lbf . in) Marking device Case style TO-220AC Modified g-2 °C300-- 80-- -0.4- oz.-0.07 ºC unless otherwise specified)= 25 PARAMETER SYMBOL TEST CONDITION S = 60 AIF µA --600 1.15 101.0 pF35 ELECTRICAL SPECIFICATIONS (TJ Cathode to anode breakdown voltage VBR = 100 µAIR Maximum forward voltage = 30 AIF = 30 A, TI = 125 ºCF J Maximum reverse leakage current IRM Junction capacitance 1.40 1.70 ºC unless otherwise specified)= 25 PARAMETER SYMBOL TEST CONDITIONS ns 175 DYNAMIC RECOVERY CHARACTERISTICS PERLEG (TJ Reverse recovery time IF = 1.0 A, dI /dt = 100 A/µs, V =30 V, T = 25°CF R J 25 A nC 485 130 Peak recovery current Reverse recovery charge trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 T = 125 ºCJ T = 125 ºCJ T = 125 ºCJ T = 25 ºCJ T = 25 ºCJ T = 25 ºCJ I = 30AF dI /dt = 200 A/µsF V = 400 VR VFM CT V = 200VR T = 150°C, V = V rated J R R V = V ratedR R I = 0.5A, I = 1.0A, I = 0.25A (RG#1 CKT)F R RR 32- 1.75 UNITSMAX.TYP.MIN. UNITSMAX.TYP.MIN. A/µs 160 260 -dl /dt2(rec)M T = 125 ºCJ T = 25 ºCJ - nH8Series inductance LS 500 -Measured lead to lead 5 mm from package body Peak rate of fall of recovery dl /dt1(rec)M 125 6.0 600 180 1.40 2.0 current during tb 0.80.5 Case style TO-220AB 30ETU06 30ATU06 SEMICONDUCTOR 30ETU06 RoHS RoHS Nell High Power Products www.nellsemi.com Page 2 of 6

Fig.1 Typical forward voltage drop characteristics Fig.2 Typical values of reverse current vs. reverse voltage 1000 100 0 0.5 1 1.5 2 2.5 3 Forward voltage drop, V (V)F lnstantaneous forward current, I (A)F Reverse current, l (µA)R Reverse voltage, V (V)R 1000 100 0.1 0.01 0.001 0 100 200 300 400 500 600 Fig.3 Typical junction capacitance vs. reverse voltage Reverse voltage, V (V)R Junction Capactiance, C (pF)T 1000 100 0 100 200 300 400 500 600 T =175°J T =125°J T =25°J 3.5 0.0001 T =175°J T =125°J T =25°J T =150°J T =100°J T =25°J 200 Fig.4 Junction capacitance vs. reverse voltage Reverse voltage, V (V)R 100 120 140 160 180 200 10-5 10-4 10-3 10-2 10-1 1.0 Fig.5 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration Rectangular pulse duration (seconds) Thermal impedance, ZθJC (°C/W) SINGLE PULSE0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 0.5 0.7 0.3 0.1 0.05 D = 0.9 SEMICONDUCTOR 30ETU06 RoHS RoHS Nell High Power Products www.nellsemi.com Page 3 of 6 Junction Capactiance, C (pF)T 100 Note: Duty Factor D = t /t1 2 Peak T = P x Z + TJ DM θJC C PDM

30 E T U 06

• Current rating (30 = 30A) 3 - TO-220AC Modified or TO-220AB Voltage R a t ing (06 = 600 V)5 Ultrafast Recovery Single Diode Ordering Information Table Device code E = 2 pins A = 3 pins DC Square wave (D = 0.5) Rated V appliedR Fig.6 Max. allowable case temperature Vs. average forward current Allowable case temperature (°C) Average forward current, I (A)F(AV) Fig.7 Reverse recovery time vs. current rate of change (ns) 0 200 400 600 800 1000 1200 Current rate of change, -di /dt F (A/μs) Reverse recovery time, trr 180 160 140 120 100 0 5 10 15 20 25 30 35 40 45 T = 125°CJ V = 400VR 200 160 180 100 120 140 Fig.8 Maximum average forward current vs. Case temperature (°C) l (A)F(AV) Duty cycle = 0.5 T =175°CJ Fig.9 Reverse recovery charge vs. (nC) 0 200 400 600 800 1000 1200 Current rate of change, -di /dt F (A/μs) Reverse recovery charge, Qrr 1200 1000 800 600 400 200 T = 125°CJ V = 400VR SEMICONDUCTOR 30ETU06 RoHS RoHS Nell High Power Products www.nellsemi.com Page 4 of 6 case temperature current rate of change 25 50 75 100 125 150 175 60A 30A 15A 60A 30A 15A

Fig.9 Reverse recovery parameter test circuit Fig.10 Reverse recovery waveform and definitions SEMICONDUCTOR 30ETU06 RoHS RoHS Nell High Power Products www.nellsemi.com Page 5 of 6

TO-220AC Modified Package Outline 30ETU06 2 pins Anode 1 3 Cathode Base cathode Anode 10.26 0.404 [ ] 9.98 0.393 [ ] Ø [0.153] 3.89 Ø [0.149]3.78 2.90 0.114 [ ] 2.59 0.102 [ ] 12.90 0.508 [ ] 12.50 0.492 [ ] 3.91 0.154 [ ] 3.40 0.134 [ ] 13.49 0.531 [ ] 13.08 0.515 [ ] 2.54 0.100 [ ] TYP 5.18 0.204 [ ] 4.98 0.196 [ ] 0.057 [1.45] 0.047 [1.19] 0.034 [0.86] 0.030 [0.76] Cathode 4.72 0.186 [ ] 4.42 0.174 [ ] 1.47 0.058 [ ] 1.19 0.047 [ ] 9.19 0.362 [ ] 8.99 0.354 [ ] 2.79 0.110 [ ] 2.51 0.099 [ ] 0.46 0.018 [ ] 0.36 0.014 [ ] 30ATU06 3 pins Anode 1 3 Anode Base cathode Cathode SEMICONDUCTOR 30ETU06 RoHS RoHS Nell High Power Products www.nellsemi.com Page 6 of 6 Anode Cathode 0.404 [10.26] 0.393 [9.98] Ø0.153 [3.89] Ø0.149 [3.78] 0.114 [2.90] 0.102 [2.59] 0.508 [12.90] 0.492 [12.50] 0.154 [3.91] 0.134 [3.40] 0.531 [13.49] 0.515 [13.08] 0.100 [2.54] TYP 0.204 [5.18] 0.196 [4.98] 0.057 [1.45] 0.047 [1.19] 0.034 [0.86] 0.030 [0.76] Cathode 0.186 [4.72] 0.174 [4.42] 0.058 [1.47] 0.047 [1.19] 0.362 [9.19] 0.354 [8.99] 0.110 [2.79] 0.099 [2.51] 0.018 [0.46] 0.014 [0.36]