30EPU12 NELLSEMI

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Technical content

SEMICONDUCTOR 30EPU12 Series RoHS RoHS Ultrafast Soft Recovery Diode

FEATURES

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage 1200 Continuous forward current lF(AV) TC = 100 °C 30 A Single pulse forward current lFSM 280 Operating junction and storage temperatures - 55 to 150 ELECTRICAL SPECIFICATIONS (TJ = 25 unless otherwise specified)ºC PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage V Reverse leakage current Junction capacitance PRODUCT SUMMARY IF(AV) trr VR 36 ns 30 A 1200 V pF µA Nell High Power Products FRED VR T , Tj Stg TC = 25 °C V VBR VF lR CT l = 100µAR 1200 - - l = 30AF l = 30A, F T = 125°CJ V = R V ratedR T = 150°C, J V = V ratedR R V = 200VR 1.95 2.35 2.60 1000 l = 60AF - 2.00 Compliant to RoHS These diodes are optimized to reduce losses and EMI R in high frequency power conditioning systems. FI The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. Reduced parts count Reduced snubbing Higher frequency operation Reduced RFI and EMI Designed and qualified for industrial level 150°C operating junction temperature Ultrafast recovery Forward voltage www.nellsemi.com TO-247AC modified Cathode Anode Anode Cathode Anode to base Cathode to base 1 3 TO-247AB 30APU12 30EPU12 Planar FRED Chip Series inductance nH-LS Measure lead to lead 5mm from package body - 10 1.0 30A / 1200V

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 unless otherwise specified)ºC MIN. TYP. MAX. UNITS Reverse recovery time ns IF = 30 A dI /dt = 200 A/µsF VR = 800 V Peak recovery current A Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS MIN. TYP. MAX. UNITS Thermal resistance, junction to case °C/W Thermal resistance, case to heatsink Mounting surface, flat, smooth and greased Weight Mounting torque N ⋅ m Marking device Case style TO-247AC modified Case style TO-247AB 320 - - ( )5 (10) (lbf . in) 0.6 1.2 435 I = 0.5A, I = 1A, I =0.25A F R RR (RG#1 CKT) 30EPU12 30APU12 52 60- trr lRRM Qrr I = 1A, dI /dt = 200 A/µs, V =30V, T =25°CF F R J T = 25°CJ T = 125°CJ T = 25°CJ T = 125°CJ T = 25°CJ T = 125°CJ 2100 545 RthJC RthCS 0.8 0.4 5.5 0.2 - g oz. PARAMETER SYMBOL TEST CONDITIONS PARAMETER SYMBOL TEST CONDITIONS 0.5 SEMICONDUCTOR 30EPU12 Series RoHS RoHS Nell High Power Products Page 2 of 6www.nellsemi.com Thermal resistance, junction to ambient RthJA 40- -

Fig.2 Forward current vs. forward voltage Fig.3 Reverse recovery time vs. current rate of change Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration Rectangular pulse duration (seconds) Thermal impedance, ZθJC (°C/W) Anode-to-cathode voltage, VF (V) Current rate of change, -di /dt F (A/μs) Forward current, IF (A) Reverse recovery time, trr (ns) Fig.4 Reverse recovery charge vs. current rate of change Fig 5. Reverse recovery current vs. current rate of change Current rate of change, -di /dt F (A/μs)Current rate of change, -di /dt F (A/μs) Reverse recovery charge, Qrr (nC) Reverse recovery current, IRRM (A) 600 800400 1200200 1000 543210 0 12001000800600400200 0 600 800400 1200200 1000 1.0 0.5 0.05 0.005 0.1 0.01 -510 -410 -310 -210 -110 10 200 180 160 140 120 100 500 400 300 200 100 600 5000 4000 3000 2000 1000 0.001 T =175°CJ T =125°CJ T =25°CJ T =-55°CJ T =125°CJ V =800VR 60A 15A 30A T =125°CJ V =800VR 60A 30A 15A T =125°CJ V =800VR 60A 30A 15A SEMICONDUCTOR 30EPU12 Series RoHS RoHS Nell High Power Products Page 3 of 6www.nellsemi.com 1.0 D=0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM Note: Duty Factor D =t /t1 2 Peak T = P xZ +TJ DM thJC C

30 E P U 12

  • Current rating (30 = 30A) 3 - TO-247AB or TO-247AC Modified Voltage R a t ing (12 = 1200 V)5 Ultrafast Recovery Single Diode Ordering Information Table Device code E = 2 pins A = 3 pins Fig.7 Maximum average forward current vs. case temperature 200 Fig6. Dynamic parameters vs. junction temperature Junction temperature,TJ (°C) Dynamic parameters, Kf (Normalized to 1000A/µs) Case temperature (°C) l (A)F(AV) Fig.8 Junction capacitance vs. reverse voltage reverse voltage, VR (V) Junction capacitance, CJ (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 5045403530251050 100 125 150 175 5025 100 125 1500 75 200 180 160 140 120 100 Qrr trr IRRM trr Qrr 2015 100 SEMICONDUCTOR 30EPU12 Series RoHS RoHS Nell High Power Products Page 4 of 6www.nellsemi.com T =150°CJ Duty cycle = 0.5 DC

Fig.9 Reverse recovery parameter test circuit Fig.10 Reverse recovery waveform and definitions SEMICONDUCTOR 30EPU12 Series RoHS RoHS Nell High Power Products Page 5 of 6www.nellsemi.com

2.21 (0.087) 2.59 (0.102) 0.40 (0.016) 0.79 (0.031) 1.49 (0.059) 2.49 (0.098) 4.69 (0.185) 5.31 (0.209) 10.90 (0.43) (TYP.) 1.01 (0.040) 1.40 (0.055) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177)Max 20.80 (0.819) 21.46 (0.845) 16.15 (0.242) 15.49 (0.610) 16.26 (0.640) 5.38 (0.212) 6.20 (0.244) 3.55 (0.138) 3.81 (0.150) 1.65 (0.065) 2.13 (0.084) (TYP.) 2.21 (0.087) 2.59 (0.102) 0.40 (0.016) 0.79 (0.031) 1.49 (0.059) 2.49 (0.098) 4.69 (0.185) 5.31 (0.209) 1.01 (0.040) 1.40 (0.055) (TYP.) 1.01 (0.040) 1.40 (0.055) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177)Max 20.80 (0.819) 21.46 (0.845) 16.15 (0.242) 15.49 (0.610) 16.26 (0.640) 5.38 (0.212) 6.20 (0.244) 3.55 (0.138) 3.81 (0.150) 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) 2.13 (0.084) (TYP.) Conforms to JEDEC Outline TO-247AC (Modified) Dimensions in millimeters and (inches) Conforms to JEDEC Outline TO-247AB Dimensions in millimeters and (inches) Cathode Anode Anode Anode 1 3 30APU12 3 pins 30EPU12 2 pins CATHODE TO BASE CATHODE TO BASE 1 2 3 1 2 3 SEMICONDUCTOR 30EPU12 Series RoHS RoHS Nell High Power Products Page 6 of 6www.nellsemi.com