301U_12 VISHAY
Document overview
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Technical content
Document Number: 93509 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 23-Jun-08 1 Standard Recovery Diodes (Stud Version), 300 A 301U(R) Series Vishay High Power Products
FEATURES
- Wide current range High voltage rating up to 2500 V High surge current capabilities Stud cathode and stud anode version High resistance to acceleration RoHS compliant Designed and qualified for industrial level TYPICAL APPLICATIONS Converters Power supplies Machine tool controls High power drives Medium traction applications ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IF(AV) 300 A DO-205AB (DO-9) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS 301U(R) UNITS
160 TO 200 250
IF(AV) 330 300 A TC 120 120 °C IF(RMS) 520 470 A IFSM
50 Hz 8250 6050
A
60 Hz 8640 6335
50 Hz 340 183
60 Hz 311 167
VRRM Range 1600 to 2000 2500 V TJ - 40 to 180 - 40 to 180 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 301U(R) 160 1600 1700 15200 2000 2100 250 2500 2600
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2 Revision: 23-Jun-08
301U(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS 301U(R) UNITS Maximum average forward current at case temperature IF(AV) 180° conduction, half sine wave 330 300 A 120 120 °C Maximum RMS forward current I F(RMS) DC at TC = 115 °C (up to 2000 V), TC = 102 °C (2500 V) 520 470 A Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 8250 6050 A t = 8.3 ms 8640 6335 t = 10 ms 100 % VRRM reapplied 6940 5090 t = 8.3 ms 7270 5330 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 340 183 kA2s t = 8.3 ms 311 167 t = 10 ms 100 % VRRM reapplied 241 129 t = 8.3 ms 220 118 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 3400 1830 kA 2√s Low level value of threshold voltage V F(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.77 0.90 V High level value of threshold voltage V F(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.84 0.97 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.49 0.59 mΩ High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.49 0.55 Maximum forward voltage drop V FM Ipk = 942 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.22 1.46 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range TJ - 40 to 180 Maximum storage temperature range TStg - 40 to 200 Maximum thermal resistance, junction to case RthJC DC operation 0.14 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.08 Maximum allowed mounting torque + 0 - 20 % Not lubricated threads 37 N · m Lubricated threads 28 Weight 301U 250 ± 5 g 303U 152 ± 5 305U 177 ± 5 307U 197 ± 5 309U 160 ± 5 Case style See dimensions - link at the end of datasheet DO-205AB (DO-9)
Document Number: 93509 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 23-Jun-08 3 301U(R) Series Standard Recovery Diodes (Stud Version), 300 A Vishay High Power Products Note The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
80 TO 200 250 80 TO 200 250
180° 0.015 0.015 0.011 0.011 TJ = TJ maximum K/W 120° 0.018 0.018 0.019 0.019 90° 0.023 0.023 0.025 0.025 60° 0.034 0.034 0.035 0.035 30° 0.056 0.056 0.057 0.057 110 120 130 140 150 160 170 180 0 50 100 150 200 250 300 350 30° 60° 90° 120° 180° Average F orward Current (A) Conduction Angle Maximum Allowable Cas e T emperature (°C) R (DC) = 0.14 K/ W 301U(R) S eries (1600V to 2000V) thJC 100 110 120 130 140 150 160 170 180 0 100 200 300 400 500 600 30° 60° 90° 180° DC 120° Average F orward Current (A) Conduction Period Maximum Allowable Cas e Temperature (°C) R (DC) = 0.14 K/ W thJC 301U(R ) S eries (1600V to 2000V) 110 120 130 140 150 160 170 180 0 50 100 150 200 250 300 350 30° 60° 90° 120° 180° Average F or ward Cur rent (A) Conduction Angle Maximum Allowable Cas e Temper atu re (° C) 301U(R ) S eries (2500V) R (DC) = 0.14 K/ W thJC 100 110 120 130 140 150 160 170 180 01 0 0 2 0 0 3 0 0 4 0 0 5 0 0 30° 60° 90° 180° DC 120° Average F orward Current (A) Conduction Period Maximum Allowable Cas e Temperature (°C) 301U(R ) S eries (2500V) R (DC) = 0.14 K/ W thJC
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301U(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Forward Power Loss Characteristics 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R =0.1K/W -DeltaR thSA 0.2K/W 0.3K/W
1.5 K/W
3 K/ W
0.7 K/W
0 50 100 150 200 250 300 350 180° 120° 90° 60° 30° RM S Lim it Conduction Angle Max i mum Aver age F or war d P ower L os s (W ) Aver age F or ward Cur rent (A) 301U (R ) S eries (1600V to 2000V) T = 180°C J 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R =0.1K/W-DeltaR thSA 0.2K/W 0.3K/W
3 K/W
180° 120° 90° 60° 30° RM S Li m i t Conduction Period M a xi m u m A v e ra g e Fo rw a r d Po w e r Lo ss ( W ) Average F orward Current (A) 301U(R) S eries (1600V to 2000V) T = 1 8 0 ° C J 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R =0.1K/W -DeltaR thSA 0.2K/W 0.3K/W 0.7K/W 100 150 200 250 300 350 400 450 0 50 100 150 200 250 300 180° 120° 90° 60° 30° RM S Li m i t Conduction Angle Maximum Average F orwar d P ower L os s (W ) Average Forward Current (A) T = 180°C 301U(R ) S eries (2500V) J
Document Number: 93509 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 23-Jun-08 5 301U(R) Series Standard Recovery Diodes (Stud Version), 300 A Vishay High Power Products Fig. 8 - Forward Power Loss Characteristics Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 11 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R =0.1K/W -Delta R thSA 0.2K/W 0.3K/W 180° 120° 90° 60° 30° RM S Lim it Conduction Period Maximum Average F orward P ower L os s (W) Average F orward Current (A) T = 180°C 301U(R ) S eries (2500V) J 2000 3000 4000 5000 6000 7000 8000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current P uls es (N) Pe a k Ha lf Sine Wave F orward Current (A) Init ia l T = 180°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any R ated L oad Condition And With R ated V Applied F ollowing S urge. RRM J 301U(R) S eries (1600V to 2000V) 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 Pulse Tra in Dura t io n (s) Pe a k Ha lf Sine Wa ve F o rw a rd Curren t (A) Vers us Puls e T rain Duration. Initial T = 180 °C No Voltage R eappli ed R ated V R eapplied Maximum Non R epetitive S urge Current RRM J 301U (R ) S eries (1600V to 2000V) 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Puls es (N) Pe a k Ha lf Sine Wa ve Forwa rd Current (A) Initial T = 180°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any R ated L oad Condition And With R ated V Applied F ollowing S urge. RRM J 301U(R) Series (2500V) 1000 2000 3000 4000 5000 6000 0.01 0.1 1 P uls e T rain Duration (s ) Pe a k Ha lf Sine W ave F orward Cur rent (A) Vers us P uls e T rain Duration. Initial T = 180 °C No Voltage Reapplied Ra t e d V Re a p p l ie d RRM J Maximum Non R epetitive S urge Current 301U(R ) S eries (2500V)
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6 Revision: 23-Jun-08
301U(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A Fig. 13 - Forward Voltage Drop Characteristics Fig. 14 - Forward Voltage Drop Characteristics Fig. 15 - Thermal Impedance ZthJC Characteristic 100 1000 10000 00 . 511 . 522 . 53 T = 2 5 ° C J Ins tantaneous F orward Voltage (V) Insta nta neous Forw a rd Current (A) 301U(R) S eries (1600V to 2000V) T = 1 8 0 ° C J 100 1000 10000 00 . 511 . 522 . 533 . 5 T = 2 5 ° C J I ns tantaneous F or ward Voltage (V) I ns tantaneous F orward Cur rent (A) 301U(R) S eries (2500V) T = 1 8 0 ° C J 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Sq u a r e Wa v e Pu l se D u r a t i o n ( s) thJCTra n si e n t Th e r m a l Im p e d a n c e Z ( K/ W) 301U(R) S eries S teady S tate Value: R = 0.14 K/ W (DC Operation) thJC
Document Number: 93509 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 23-Jun-08 7 301U(R) Series Standard Recovery Diodes (Stud Version), 300 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 513 24 30 1 U A 250 1 - 30 = Essential part number 4 - A = Maximum leakage selection I RRM = 2 mA TJ = 25 °C 5 - Voltage code x 10 = V RRM (see Voltage Ratings table) - 1 = Standard device 3 = Top threaded version 5 = Type for rotating application with top threaded version 3/8 16UNC-2A 7 = Type for rotating application with flexible lead 9 = Type for rotating application with top threaded version 3/8 24UNF - U = Stud normal polarity (cathode to stud) UR = Stud reverse polarity (anode to stud) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95337
Document Number: 95337 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 22-Jul-08 1 DO-205AB (DO-9), B-60, B-61, B-41, B-40 for 301U(R), 307U(R), 305U(R) and 309U(R) Series Outline Dimensions Vishay Semiconductors DIMENSIONS FOR 301U(R) SERIES - DO-205AB (DO-9) in millimeters (inches) Ceramic housing 19 (0.75) MAX. MAX. 3/4"-16UNF-2A for metric device: M16 x 1.5 contact factory 140 (5.51) 146 (5.75) 28 (1.10) MAX. 21(0.83) MAX.
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95337
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Vishay Semiconductors DO-205AB (DO-9), B-60, B-61, B-41, B-40 for 301U(R), 307U(R), 305U(R) and 309U(R) Series DIMENSIONS FOR 307U(R) SERIES - B-60 in millimeters (inches) 19 (0.75) MAX. 11 (0.43) NOM. 12 (0.47) MIN. 3/4"-16UNF-2A Ø 8.5 (0.33) 3.9 (0.15) Ceramic housing 21 (0.83) MAX. 140 (5.51) 148 (5.83) 54 (2.13) MAX. 32 (1.26)
Document Number: 95337 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 22-Jul-08 3 Outline Dimensions DO-205AB (DO-9), B-60, B-61, B-41, B-40 for 301U(R), 307U(R), 305U(R) and 309U(R) Series Vishay Semiconductors DIMENSIONS FOR 305U(R) SERIES - B-61 in millimeters (inches) DIMENSIONS FOR 309U(R) SERIES - B-41 in millimeters (inches) 3/8"-16UNC-2A 6.4 (0.25) MAX. 7 (0.28) MAX. 3/4"-16UNF-2A 16 (0.63) Ceramic housing 59 (2.32) MAX. 21 (0.83) MAX. 98 (3.86) MAX. 32 (1.26) 3/8"-24UNF-2A 7.6 (0.3) MAX. 7 (0.28) MAX. 3/4"-16UNF-2A 17.5 (0.69) Ceramic housing 60 (2.36) MAX. 21 (0.83) MAX. 97 (3.82) MAX. 32 (1.26)
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95337
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Vishay Semiconductors DO-205AB (DO-9), B-60, B-61, B-41, B-40 for 301U(R), 307U(R), 305U(R) and 309U(R) Series DIMENSIONS FOR 303U(R) SERIES - B-40 in millimeters (inches) 3/8"-24UNF-2A 16.5 (0.65) MAX. Ceramic housing 9 (0.35) MAX. Ø 27.3 (1.07) MAX. 3/4"-16UNF-2A 17.5 (0.69) 59.7 (2.35) MAX. 29 (1.14) MAX. 32 (1.26) 21 (0.83) MAX.
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