IC
STMicroelectronics
The device is a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled wit…
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Summary
Low voltage fast-switching NPN power transistor 24-Oct-2006
Description
The device is a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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