2STR1160 integrated circuit reference

IC

2STR1160

STMicroelectronics

The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled wit…

Manufacturer variants
1
Selected specification
STMicroelectronics
Documents
1

Manufacturer Specifications

Compare 2STR1160 variants.

Select a manufacturer to view its specifications, local PDF, and searchable HTML text.

1 manufacturers / 1 documents
Manufacturer Series Package Documents Available Select specification
STMicroelectronics - - 1 PDF HTML Viewing

Selected Specification

STMicroelectronics 2STR1160 overview.

Summary

Low voltage fast-switching NPN power transistor 12-Feb-2008

Description

The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Source title 2STR1160 Datasheet(PDF) - STMicroelectronics