2STC4467 integrated circuit reference

Amplifier

2STC4467

STMicroelectronics

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

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STMicroelectronics 2STC4467 overview.

Summary

High power NPN epitaxial planar bipolar transistor 30-Apr-2008

Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Source title 2STC4467 Datasheet(PDF) - STMicroelectronics