IC
STMicroelectronics
The device is manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low satura…
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Summary
High current gain characteristic 03-Dec-2009
Description
The device is manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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