2SK962 FUJI

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2S K962-01 FUJI POWER MOS-FET Ss N-CHANNEL SILICON POWER MOS-FET F Il S E R I ES Features MOutline Drawings @ High speed switching — ~~ . yosat _4.5802 @ Low on-resistance ‘sm B52! @No secondary breakdown ~ 1 7 2 Low driving power / aA) a @High voltage 4 @Viss= £30V Guarantee o) > a © Avalanche-proof T a : » 22. TI { 16 ‘ E| 1 :60te BApplications YT t = 2:0rah Switching regulators . uh 0.5*82| | 15 euPs SB ar @DC-DC converters po General purpose power amplifier JEDEC a EIAJ SC-65 _ MMax. Ratings and Characteristics Equivalent Circuit Schematic @Absolute Maximum Ratings(Tc=25°C) : Items Symbols Units oe Drain-source voltage [Voss 900 Vv Continuous drain current Ib [8 | A Drain(p) Pulsed drain current [ Tow) 23 | A Continuous reverse drain current] Ine | AL ___Gate-source peat voltage | Vess_ +30 Vv ~_Max. power dissipation Po | __ 150 |W _ Gate() Operating and storage Te 150_ C. Sourcets) temperature range Tae —55~ +150 °C @Electrical Characteristics(Tc =25°C) - _—— ~ __Drain-source breakdown voltage | Voss | Iv=lmA Ves=0V «(900 _. Vv Gate threshold voltage Vesam | In=ImA_Vos=Vos | 25 | 3.5 5.0 | V view : ; Vos =900V _Ta=2C | 10 500 | A _ Zero gate voltage drain current Toss Ves=0V _ Tav=J25C 02, 10 | mA __ Gate-source leakage current | Tess | Ves==30V_ Vos=0V i [ie 100 | nA Drain-source on-state resistance | Rosson) Jv=4A Vos =10V te 1.48 2.0 a Forward transconductance [gn | ‘In=4A Vs=25V 30 | 6.0 | Ss Input capacitance Ciss Vns=25V 2100_| Output capacitance |_Coss Ves=0V 300 pF ___Reverse transfer capacitance | Cras f =IMHz _| 160_| Turn-on time ton | tovon _ _ 15 ant taom tt) w Yeeceiy Te=ba 3x0 | 350) Turn-off time torr | town Ra 750 300 450 - (tacorn +t) to aa _ _ 160 | 240 __Diode forward on-voitage | Vsn | Iv=2Xlnn Ves=0V_ Ton =25°C 1.0 15 |_V Reverse recovery time tes L=Ine_ d/h =100A/s Ton =25C ns @Thermal Characteristics Items Symbols _| Test Conditions | Min. | Typ. | Max. | Units 5 : Runen-a | channel to air 35.0_ | “C/W Thermal Resistanc | Runcen= hannel to air Td ‘C/ hermal Resistance Riemer | channel to case 0.83 | “C/W A2-67

FUJI POWER MOS-FET 2SK 962-01 M@ Characteristics 8 / Ce AA mas vos eczey 1 Rusevest® AHH rosinetirenitonaaves=iov +4444 Ov =7.0V Toh=28'C Crt rr] H esge Fre eee CC A ov’ SEE ree ee 0 / FERErer pre a ye] i TES — #4 =H Sc a LT | 58v Reson 2 Lee ear a ZS esom ET are eee & CORE Ee @ Coocpeet oper coco aay COO CesT CCE w (CCC Cert eet Cee ESE EEE EEE soy (ee AGERE EGSGnEne RECS CCOCCee eer Lf J So | Peps So ey ov se ° 20 40 60 -50 °o 50 100 150 Vos(VI Terl'C) Typical Output Characteristic On State Resistance vs. Tch HA Fentanngoy [ oH Rosen=f{10}:80us PULSE Test-romas'e}] Cer HE PULSE TES i. cmagy sov aay 1 Cor Hi Teh=25°C CI Coo He oe A oh fa - CPSC eee | | HHH HE + | | i ry f—#H an im | losiom 7.0V. | lo CCE cm CEO rsv TY SPOOL ey Py 77 a.ov

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Coe HE {eal KH — 4 eee onsneneseeeeeees -{ , H + | HEH eH [| CET Ty iy yy rr yr PrErTy yt Py rrr ry oO 5 10 6 ° 5 10 6 Vest 1A) Typical Transfer Characteristic Typical Drain-Source on State Resistance vs. In ro bo oferfllok Gye PULSE TEST. = EH Vesito=f(T.ch):] D=!mA.Vos=Ves I i ta im SEES por ima RES Ee PSS F mex. 1] EEEEER EEE a a ml a ere PEE EEE EEE EERE a a COC eer = Fee ee i i a cH a HERRERO Coz | a = HEE EERE Scaeeeenaeeetenre oe a HERR an | f AZEEER Vee? EEE OES 4 oe ee see EE | a (Geer oo 0 eee cee eo HA Pat eo (EEE EERE EEE BEgEceseeegeecss Seesengaeaaeecest a Geer eee ° 5 10 6 ° 50 100 160 H(A} Tal'C) Typical Forward Transconductance vs. Io Gate Threshold Voltage vs. Ton A2-68

2SK 962-01 FUJI POWER MOS-FET — eSSsSSSSsss OO 0 ———| oo a BT I EH » es-ES ACC h Cee eye NER ERROR 600A ves CETTE PVE RSC EPs 4 4 se ‘as Cees | ACC CEC Pe ol LEE (PA ee Se eo TTT aT eee to i ETT TT AAAS z20v [TI op ASKER RSREEE TA co 7] v. ERAEER eee Ne LT SA Pree es * ol fee, © SO TT 0 PRATT ees PTT TT —— or | \\ ht tov (EERE ERE EEE LORS, 0 a 20 30 ° 50 100 160 200 Vos(V) Qg(nc} Typical Capacitance vs. Vos Typical Input Charge 55 as “CON Hiems EH ‘Lr=t(Vs0 81 PULSE TEST \\, ee Hoot LLC TT HEE EEE FREEEERSEee eer a le ss os | (w) IN see HE EEE PA ®) SCEPC eee eer \\ x Feet ceo EO TOUR COCECCCCEoCCe eo 05 10 wy 15 ° 50 ee 160 VsolV: Te Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc 5 en ella » wth LLIN NT" Eb oe SSH NOS | eer eee saat aes Ss eet ete Fifes SSS HSH al Co oT nn eee eee en lil ALON | 10° Loos, aT rege NT ioe cojw) 10" SSE Sits Beets Ht _S] SE oes. ae = Saati ann | NTS seem 0.05 SHH ot tt Cit 4 t TNT on aaa 0.02 TH TAT CHI D=t yl joel, iu TTT im = Ui | ee oe 10+ 103 10? 107 10° 10! \\ 10" 108 10 1S) Vos{V} Transient Thermal Impedance Safe Operating Area A2-69

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AREAS OIGARC A EE WISE L Pea SAE S BEATE Z OME CMM IS FUE SF EO TLS ETA, atetatst DER AG - 1N7— FE RAB AGHOMREES oD (03) 5388-7657 AIMS AMAE am (06) 455-6467 = RES (03) 5388-7681 ACRE HER (0764) 41-1231 mst enc) mes RAKERR cw (03) 5388-7680 ABR (0878) 51-0185 @ 03) 5988.7651 RHBRM (0263) 36-6740 PATH MISBMES tT (052) 204-0295 VAD B (03) 5388-7685 ANRHLAMSAHSD x (092) 731-7192