2SK961 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 2SK961
DESCRIPTION
- Drain Current –ID=3A@ TC=25℃
- Drain Source Voltage- : V DSS=900V(Min)
APPLICATIONS
- Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK961
- ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT (BR)DSS Drain-Source Breakdown Voltage V GS=0; ID= 1mA 900 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 10mA 2.1 3.0 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=1.5A 3.5 5.0 Ω IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0 500 uA ton Turn-on time VGS=10V;ID=2A; RL=50Ω 60 90 ns toff Turn-off time 210 340 ns VSD Diode Forward Voltage IF=3A; VGS=0 1.0 1.35 V PDF pdfFactory Pro www.fineprint.cn