2SK961 FUJI
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N- SHANNEL SILICON POWER MOS-FET F I S E R I ES Features HOutline Drawings @lligh speed switching @ low on-resistance agit @ Io secondary breakdown east 5) ae - 4 | low driving power AR ; @ igh voltage 4 legal Applications ili as ose HI v2 1 Gate @ Switching regulators vy 3 Saree @lPS '
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@1)C-DC converters @3eneral purpose power amplifier TO-220AB ~ scas M@Max. Ratings and Characteristics WMiEquivalent Circuit Schematic @/\\bsolute Maximum Ratings(Tc=25°C) : _— Items Symbols | Ratings | Units __ Drain-source voltage Voss [900 | OV — Continuous drain current Tp _ A Drain() ~ Pulsed drain current Touts A __ Continuous reverse drain current | Tor A _ Gate-source peak voltage Voss Vv ~ Max. power dissipation Pp W Gate(s) Operating and storage Ten 150 °C Source(s) _ temperature range Toe =55~ +150] °C @llectrical Characteristics(Tc= 25°C) _ Items Symbols [Test Conditions | Min. | Typ. | Max. | Units — Drain-source breakdown voltage | Vosrypss In=lmA_Ves=0V 900 [| | | V ~ Gate threshold voltage Vesin In=10mA_Vos=Ves i 21| 30] 40] V __ Zero gate viotage drain current | Inss Vos=900V Ves=0V Tan=25C [| | 10 | 500 | yA "_ Gate-source leakage current_| Tess Vos=+20V_Vns=0V [| 10 | 100 | nA —_ Drain-source on-stage resistance | Roster In=1.5A_ Ves=10V. [| 35] 50, a __ Forward transconductance Sis In=1.5A Vos=25V. [20]; 40| | S$ input capacitance Cus Vos=25V [| 900 _| 1400 __ Output capacitance Coss Ves=0V {| 80 | 130 | pF __ Reverse transfer capacitance | Crs f_=1MHz [| 35 | 60 | . i tor Vec=30V Re =502 a Switching time tact 1p=2.0A [150 [50] ns a ti Vos=10V [T 60_| 90 ~ Diode forward on-voltage Vso Ir=2XIox Vos=0V_Ten=25°C | 100) 135] V __ Reverse recovery time tr Te=Iox_di/de=100A/s Ten = 25°C [600 [| | ns @hermal Characteristics = Items. Symbols [Test Conditions | Min. | Typ. | Max. | Units , ee “c/w _ Thermal Resistance Rung | channeltocase | 86 | °C/W A2-64
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