2SK960-MR FUJI
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2SK960-MR FUJI POWER MOS-FET N-CIWANNEL SILICON POWER MOS-FET F I Ss E R I ES Features Outline Drawings @ High speed switching pO og pany 4202 @ Low on-resistance V eof. 22102 @No secondary breakdown Cmdr. = @ Low driving power go! | @ High voltage $l aa “i [ez a _ 4 Applications L ! TM seoe | ' ® Switching regulators i| i ee eurs —t ot] ®DC-DC converters j eer? ee os - esusoz | | | possoe T 2m02 General purpose power amplifier _ SCI Max. Ratings and Characteristics HEquivalent Circuit Schematic @Absolute Maximum Ratings(Tc=25°C) : items Symbols Units: D ‘ain-source voltage Voss | 900) Continuous drain current In 3. | A P ilsed drain current Ioous | ___J2 A Dra) Continuous reverse drain current| Ion |= A G ite-source peak voltage | Voss +2 | Vv Max. power dissipation [Pp 40 WwW Gate(G) Overating and storage [To 10 | temperature range Tus =55~+150/ “C Source(S) @Electrical Characteristics(Tc=25°C) — hems Symbols Units Dri in-source breakdown voltage | Veanss | In=lmA_Ves=0V. | 900 [| Vv Ga‘e threshold voltage Vesam In=10mA _Vos=Vos 21 3.0 Cv Zero gate viotage drain current | Toss |_Vos=900V Ves=0V Ta=25C [| | 10 | 500 | uA __Gave-source leakage current | Joss | Vos=+20V_Vns=0V 10 100 | nA Dr: in-source on-stage resistance | Roscom In=15A_Vos=10V a Fo ‘ward transconductance | grs | Io=1.5A_Vos=25V 2.0 4.0 s Ing ut capacitance Cis | Vos=25V (| 900 | 400 __Ou:put capacitance Coss, Ves=0V a) 130 pF Re verse transfer capacitance | Crss |_ f =1MHz 35. 60 Switching ti ton Vee =30V Ro=500 ~ 60 90 | arenes att) taioin 1p=2.0A 150 |_250 ns me so tr |_Ves=10V 60 Cs ~ Dinde forward on-voltage Vso | Ir=2Tor Vos=0V_ Ten =25°C 1001.35 | V Re verse recovery time ter Tr=Ior_di/dt=100A/ys Ton =25°C a es @Th2rmal Characteristics lems Units Thommal Resistance Rincen-a | channel to air |__| fas CW rermal Resistance Rinene) | channel to case 3.125 | °C/W A2-61
FUJI POWER MOS-FET 2SK 960-MR ee Characteristics ” TT Totes oue pas wer Tooa5ee [_[] LITT eT TT TTT) el LT] ] TI IRoston)= (Ta): 1o=15A Ves=10\\ /| = Wf 10 5 || 80 I oov CCEEe A H OM 5 7 | ty L A | | a ‘4 Rao ® 7 anne HEE Peale cain A) 2 Ane TI im fa) 4 ae Lb AT ann os Peer Ce f/f | | [Ty ce Coo 7 aceen Coo caae of coo LLL nan o 0 0 0 0% 8 6 7 “50 ° 50 100 160 Vos (V) Ta CC) Typical Output Characteristics On State Resistance vs. Teh
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« 0 ESS SSE eSSSS 10 =| Lt 08 SiEtssarrscoeres cote! Nd ee Fee s LLP x Oo O02 O4 O06 OB 19 12 14 16 ° 20 4 6 8 0 12 140 Vso (V) TCC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. T, Lea eee Le 10° ee | | RN eM ee et ESE SA SEEPS ae 005 tied JUL | ‘ aa a “| alll ) NUN eae all | ia, ee be TN cow SS a et on Ea 10° 1o* 10° o 16? 10! we 8a so wm wo oe 00 t os | Transient Thermal Impedance Safe Operating Area A2-63
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