2SK949-MR FUJI

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2SK949-MR FUJI POWER MOS-FET ——— N-CHANNEL SILICON POWER MOS-FET F I Ss E R I ES , @-eatures MOutline Drawings @tigh speed switching 2205 yao gp penny S802 @ Low on-resistance [ _ ry No secondary breakdown B mi 7 Al - @Low driving power Rea 3] 2! ara @tigh voltage 3| I. ae "i laas Applications ad eee? © Switching regulators ; | | i| 2 Bie LPs 4 : ouree @CC-DC converters | Hee? ee _ asuoa | [Peso Teno ®@Ceneral purpose power amplifier JEDEC — sca @ Max. Ratings and Characteristics WEquivalent Circuit Schematic @/bsolute Maximum Ratings(Tc= 25°C) TI Ttems Units — Brain-source voltage Voss 1500 V ___ Continuous drain current i [6 | A Drain (D) ___ Pulsed drain current Tnouis) A ___ Continuous reverse drain current] Tor [6 A __ Gate-source peak voltage Voss £20 Vv in| ___ Max. power dissipation Pp 40 WwW Gate (G) Operating and storage Tor C Source (S) _temperature range Tote. =55~ +150] °C @Electrical Characteristics(Tc=25°C) _ Items [ Symbols | Test Conditions [| Min. | Typ. | Max. | Units ___drain-source breakdown voltage | Vases Ib=ImA_Vos=0V [so | | [| Vv ____ 3ate threshold voltage Vescm Ib=10mA__Vos=Ves 3.0 40[ V . i Vos=500V | Ten=arc | | 10 | 500 | uA __Zero gate voltage drain current | Toss Vee=ov Ta=l5C [102 110 mA _ 3ate-source leakage current Vos=+20V Vos=0V [_|_10 100 nA _ drain-source on-state resistance 1p=3.5A_Vos=10V [|i 12] 9 __ Forward transconductance Bis Ip=3.5A__Vos=25V | 40 { 70) [| S$ ___nput capacitance Cis Vos = 25V |__| 1200" [1800 __ Dutput capacitance Coss Ves=0V ; | 120 | 180 pF ___ Reverse transfer capacitance | Cras f=1MHz ee ee ee Farn-on time fy Va=30V Ip=2TA en eT {ton +taom tte) te Var yee [| 40 | 70 _— os=10V ns Turn-off time torr tavain R500 [| 200 “| "3007 — {tenn td) u ° [0 ___ diode forward on-voltage Vso Ir=2XIpx Ves=0V Tn=25C {| | 10] 15) V __ Reverse recovery time tre Tk=lor di/d=100A/us Tn=25C} | 300 | | ns @Thermal Characteristics _ Items. Symbols | Test Conditions | Min. | Typ. | Max. | Units _Thermal Resistance Riwen-o | channeltocase TT 8.025 | “CW A2-40

2S|C 949-MR FUJI POWER MOS-FET —_—_[ WC aaracteristics TPRA LI [J] Res(on)=#( Toh) | tov. AW 55V S50v voss10v |] [tI verso Yi — +20" 3 Lt Mt lA] 4 i - - mayan | A 2H HH aya 2 aa noe PEPE ee wR Po ca) BEBE Sef tt ? a ‘Leeerr| oo Ho PACE EE EEE ° id 20 x» 40 55 ° 50 100 0 Vos (V) TaCC) Typical Output Characteristics On State Resistance vs. Ten [- HAH lesf(Ves) = [[_] [Reon fle) tomas] [ | | ‘BOs pulse test | | LI LOCO sy 3 25° ma [| ine Lie i i: aoee - E fae alae Hoo Hee | CCI or ase 1 | Rosen |1 oon Neeaee we Hf | | @ FH | ee Hy corr HH ny ense— ae ~ | it 1 Arne }| LT | BOV TOV —21

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° 2 4 6 x wy 12 Io(A) Typical Transfer Characteristic Typical Drain-Source on-State Resistance vs. lo -H Vess25v | | 4 CCl max? SEE EEE SO Fa '0 COP EET] PDR HoH Se | 8 | et | Sage SSeee See pe [tT | Setao] a Saeaee “ALLELE AEE d suabesnerceseeene ats 4 Hq we Eee © Pte HH Oo EEE EEE aT ~ EEA co mm Pon I BREE PR Seppe oF ; . COC ee ee “50 Oo 50 Loe} 50 lo(A) Ta C) Typical Forward Transconductance vs. Io Gate Threshold Voltage vs. Ten A2-41

FUJI POWER MOS-FET 2SK 949-MR KO fees yeevwory | | | LT | on Ty? ‘ssassabanaiil \\aEEeY 40 oJ Tel RL. SS ———— YW wv) === === M) pg Ht" 4 °C SSS ee i\\ | [TI EERE Y COPE} NN || ° 10 ES ES ° 16 30 a0 ° Vos (V) Qg (nc) ‘ Typical Capacitance vs. Vos Typical Input Charge TT yt Ty [TTT] stanEe? OeRr rae UT of eee | BERSGBRBBEEZA0 === = = NET essere | a NL

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