2SK947-MR FUJI
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2SK947-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F I Ss E R ! ES Features Outline Drawings @ High speed switching 3 aay py 0? ®@ Low on-resistance [ yo TA anso2 @No secondary breakdown rsd ct J @ Low driving power ian a! “ | Applications Ale. .] -| @0C-DC converters 4 2 ben General purpose power amplifier rs | |Lorso2 ) oss? . oz | i ep ES4802 254208 | 2.7302 [veoec [OO MMax. Ratings and Characteristics MeEquivalent Circuit Schematic @Absolute Maximum Ratings(Tc=25'C) Items Units ~_Drain-source voltage Vv Continuous drain current A Drain (D) __Pulsed drain current [Inows | 48 | A Continuous reverse drain current A Gate-source peak voltage Vv ___Max. power dissipation Pp | 40 TW Gate G) Operating and storage |_Ten 150 | "C Source ($) temperature range Tos =55~ +150] °C @Electrical Characteristics(Tc = 25°C) , Items. | Symbols [Test Conditions | Min. | Typ. | Max. [ Units Drain-source breakdown voltage Ib=1mA_Ves=0V [oo | | [ V Gate threshold voltage Ip=10mA_Vos= Vos [21 [ 30T 40] Vv Vos=250V Ta=erc [Tio | 500 | uA Zero gate voltage drain current | Inss Vos=0V Tw=lse [02 | 10 | mA Gate-source leakage current Vos=+20V_Vos=0V [| 0 | 100 nA Drain-source on-state resistance 1b=6A__Vos=10V [| 025| 030| 0 Forward transconductance | gs (| ‘Ib=GA_Vos=25V. | 40 [9.0 | $s Input capacitance Vos=25V |__| 1200 “| 1800 Output capacitance Ves=0V [| 200 | 300 pF Reverse transfer capacitance f =IMHz [| 60 [90 Turn-on time ton Vec#30V In=3A ee ee (ton t+ tegom + te) te 50 80 = : t+=———| Vcs=10V “5 ns Turn-off time torr Ttaccin R500 200 | 300 tavorn tte) te ° | Diode forward on-voltage Vso Tr=2XIon Vos=0V Ta=25C [| Li] 15] V Reverse recovery time tre Tr=Ior_di/d=100A/~s Tn=25C [| 150 | | ns @Therma! Characteristics Items. Symbols [Test Conditions | Min. [ Typ. | Max. | Units si Ruven-o { channeltoair “C/W ‘Thermal Resistance Rinen-e Tehama egg ai “cow A2-37
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