2SK932 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ Adoption of FBET process + Large ly¢gl + Small ciss - Very low noise figure - Very small-sized package permitting 25K932-applied sets to be made smaller and slimmer Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage Vpsx 15 Vv Gate to Drain Voltage Veps -15 v Gate Current Ig 10 mA Drain Current Ip 50 mA Allowable Power Dissipation Pp 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Gate to Drain Breakdown Voltage Vigrycps Ig=—10pA,Vps=0V -15 v Gate Cutoff Current Igss Ves=—10V,Vps=0V -10 nA Cutoff Voltage Vesom Vos=5V,Ip=100pA -02-06-14 V Drain Current Ipss Vps=5V,Vgs=0V *5.0 24.0 mA Forward Transfer Admittance lyggl Vps=5V,Vgs=0V,f=1kHz 25 «50 mS Input Capacitance Ciss Vps=5V,Vgs=0V,f=1MHz 10 pF Reverse Transfer Capacitance rss Vps=5V,Vgs= 0V,f=1MHz 3.0 pF Noise Figure NF Vps=5V,Rg=1kQIp=1mAf=1kHz 1.5 dB * : The 25K 932 is classified by Ipgg as follows (unit : mA): (Note) Marking: B Package Dimensions 2050 Ipgs rank : 21,22,23,24 c (unit: mm) G [i con i Ey D rea Leet G: Gate | | $t Source tii | D: Drain a 0.8 SANYO ! CP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN N148MO,TS No.2841-1/3
16 Ip _- Vp 20 !p_~ Vos T wt TTT TT TTT Pipi tT eat LETT et gs EE | be pat jl ee | rn 4A ar , Moyer «| coe 3 eee eU7 TT ow | ag a | . (POL of (i ~o3v}_| 1 pals oa —aav | Yaar ovo] ae a 0 04 O8 2 46 20 ° 2 4 6 8 10 Drain to Source Voltage,Vps — V Drain to Source Voltage,Vps - V Ip - Ves ” 2 Ves(off) - Ipss mT | | | Be Ip=100pA i} > 1 ; tgs q 208 & if | eg “120 -1.0 .-0.8 -06 -04 -02 ° 3 5 7 to 2 3 5 Gate to Source Voltage,Vgs — V Saturation Drain Current,Ipgs — mA. 2 lyfs|_ = lb wn 100 lyts|_ — loss. a eine TTT TT eee | rT id or set | F | ot i gee a ee en wT Et) gs & & a Ey : Ceo i ania ee | Drain Current,Jp - mA Saturation Drain Current,Ipss — mA 3 Ciss - Vos. . 10 Crss_ =~ Vos. =0V = _ esis [| iit JT] * “Site | Po =er PTT EKLUT e,t] [T] iPr ty ¢ [tt | aigtTP Perr Tt gs ii} Ty) Pee | PH HHH TT g 5 eitt Ty ttt [ Geo PET TT TTT 740, we 0, 5 [a a3 Drain to Source Voltage, Vas — V Drain to Source Voltage,Vps —V No.2841-2/3
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z | 200 fe KEL TTT g IN 8 160 2 N B 420 IN . Pet tE TN TT s \\] 2 s s N\\ < ° N 0 2 © 60 80 10 120 1&0 160 Ambient Temperature,Ta — °C MI No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO. LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; ittis not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. eee No.2841-3/3