2SK808 PANASONIC

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Technical content

Power F-MOS FET 2SK808, 2SK808A 2SK808, 2SK808A Silicon N-channel Power F-MOS FET @ Features ™@ Package Dimensions © Low ON resistance Rus (on) : Ros (on) = 4.70 (typ.) Unit: mm © High switching rate : t/= 40ns (typ.) 5 oem bam ¢ No secondary breakdown & © High breakdown voltage = ad see @ Application Fl [og ¥ © No contact relay 5 | - eo © Solenoid drive © Motor drive Js TTT sax 0S © Control equipment 4a] YE see | © Switching power source =| i {| Geso1 | Lf2 4-03 | @ Absolute Maximum Ratings (Tc=25°C) Pslneeens |__ 800 , “Ga Gate source voltage ¥ 3 : Source | i [ec [wm fo | OR eh pak petage | Drain current A Wap Power Gsspaon Fese| *& [-s— ‘ Channel temperature [Ta | 50 | Storage temperature c @ Electrical Characteristics (Tc=25°C) Item Symbol_| Condition [ min. | typ. | max. | Unit Dram eae ee Gate-source current Less Vos=+20V, Vps=0 eee Drain-source voltage a Voss | Ip=1mA, Vos=0 Oe v _ Gate threshold voltage Vin Vos=25V, Ip=ImA fa [| ts Tov = 4 Forward transfer admittance Vos=25V, Ip=0.7A [o4 [os | [os i ia apace ee a a i Output capacitance Vos=20V, Vos=0,f=IMHz [| 7 | | oF | Reverse transfer capacitance ee a ee eee fon) Vgg=10V, Ip=0.7A [fs | a Fall time te) yoempeoy, he 2850 a Delay time tein | eee [| wo Ts

Power F-MOS FET 2SK808, 2SK808A Ip—Vos {Ys | —Ib Rps (on) —Ip n =| TTT Te LL ; PA Tomas gu [eae WT) TT 3 HT] TACT SU a | . : 3 Su s Bae £1 | | + ELT TT) Be % ve g 4] ae PICU TAT og Gr TASS Se RT L4G ia E oa ye 2 GEERT TAR) er) a Tn Ae | TT nat [ LITT T tri Tt ° a yea a ee ae CT OY Dram-source voltage Vix (V) ‘Dram current {y (A) Dram current Iy (A) In-Ves Crm, Casey Cra Vos tom te ts (off)—Ip TO) T= 2.8! Mead B so hE 140 frase HTT eRe HE aa Bolg | 2m PS pit Fa = Foam GGnnnr an oes Ha PCAC) je ERP 7 nn Eis ! Fo ALLEL ET TT 3 olNY PIU) eee UST gis BS AS Ssea Sanne 2 Ls | PUTT) 2° SCRE INU os oh | eat NiO OROUO/ARINRIN Oh =====2====-- BE Mes nia aacdll re : Sa at LTT UATE) GEERErEErER LETTE ETE ARBED: BCPA ; Gate-source voltage Vi. (V) ‘Dram-source voltage Vin (V) Drain current Ip (A) Pp-Ta Safety operation area (ASO) Ros (en)—Ip CIN? ates SECT ght s LENLLLLL| a im | & SSS aae i eT ms “| é,| |! Nol | 2 See Pan oe A | I 2 PTE NS F je aT er TT TTY 2° So oS So 2 [ar PCoOPeNT «0 Ee oo a 6 2 © & m iw im 19 1% Ro eee 0 08 16 et 32 40 48 Ambient temperature Te (°C) Dram-source voltage Vin (V) Drain current fy (A)