2SK759 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 2SK759
DESCRIPTION
- Drain Current –ID=8A@ TC=25℃
- Drain Source Voltage- : V DSS= 250V(Min)
- Fast Switching Speed
APPLICATIONS
- high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK759
- ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage V GS=0; ID= 10mA 250 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.0 5.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A 0.25 0.4 Ω IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±1 uA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS= 0 100 uA ton Turn-on time VGS=10V;ID=5A; RL=20Ω 55 ns toff Turn-off time 200 ns PDF pdfFactory Pro www.fineprint.cn