2SK665 PANASONIC

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Technical content

Silicon MOS FETs (Small Signal) unit: mm Marking Symbol: 3O Internal Connection 1: Gate 2: Source EIAJ: SC-70 3: Drain S-Mini Type Package (3-pin) 2.1±0.1 1.3±0.10.9±0.1 0.7±0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0±0.2 0.650.2 0.65 0 to 0.1 0.2±0.1 G R 1 D S R 2 2SK665 Silicon N-Channel MOS FET For switching n Features l High-speed switching l Small drive current owing to high input inpedance l High electrostatic breakdown voltage n Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol V DS V GSO ID IDP PD Tch Tstg Ratings 100 200 150 150 -55 to +150 Unit V V mA mA mW n Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Turn-on time Turn-off time Symbol IDSS IGSS V DSS V th R DS(on)*3 | Yfs | V OH V SL R 1 + R2*1 ton*2 toff*2 Conditions V DS = 10V, VGS = 0 V GS = 8V, VDS = 0 ID = 100mA, VGS = 0 ID = 100mA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz V DD = 5V, VGS = 1V, RL = 200W V DD = 5V, VGS = 5V, RL = 200W V DD = 5V, VGS = 0 to 5V, RL = 200W V DD = 5V, VGS = 5 to 0V, RL = 200W *1 Resistance ratio R1/R2 = 1/50*2 ton, toff measurement circuit*3 Pulse measurement min 1.5 4.5 100 typ Unit mA mA V V W mS V V kW ms ms max 3.5 200 Vout VDD = 5VVGS = 5V 50W 200W100mF Vin 90% 10% 10% 90% Vout ton toff

Silicon MOS FETs (Small Signal) PD ¾ Ta I D ¾ VDS ID ¾ VGS | Yfs | ¾ VGS C iss, Coss ¾ VDS R DS(on) ¾ VGS V IN ¾ IO 2SK665 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW ) 01 0 826 4 120 100 Ta=25˚C 5.5V 5.0V 4.0V 3.0V 4.5V 3.5V VGS =6.0V Drain to source voltage VDS (V) Drain current ID (mA ) 01 0 826 4 120 100 VDS =5V Ta=–25˚C 25˚C 75˚C Gate to source voltage VGS (V) Drain current ID (mA ) 01 0 826 4 VDS =5V Ta=25˚C Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS ) 0.1 1 10 1000.3 3 30 VGS =0 f=1MHz Ta=25˚C C iss C oss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) 01 0 826 4 120 100 Ta=75˚C 25˚C –25˚C ID =20mA Gate to source voltage VGS (V) Drain to source ON-resistance RDS(on) (W ) 0.1 1 10 1000.3 3 30 0.1 0.3 100 300

1000 VO =1V

Ta=25˚C Output current IO (mA ) Input voltage VIN (V)