2SK0663 PANASONIC

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Silicon Junction FETs (Small Signal) unit: mm 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching I Features GLow noise-figure (NF) GHigh gate to drain voltage VGDO GS-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings −55 −55 150 125 −55 to +125 Unit V V V mA mA mW I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Mutual conductance Input capacitance (Common Source) Reverse transfer capacitance (Common Source) Noise figure Symbol IDSS* IGSS VGDS VGSC gm Ciss Crss NF Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = 100µA, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100kΩ f = 100Hz min 2.5 max −10 Unit mA nA V V mS pF pF dB typ 7.5 6.5 1.9 2.5 Marking Symbol (Example): 2B * IDSS rank classification Runk IDSS (mA) Marking Symbol P 1 to 3 2BP Q 2 to 6.5 2BQ R 5 to 12 2BR 1: Source 2: Drain EIAJ: SC-70 3: Gate SMini3-G1 Package 2.1±0.1 1.3±0.1 0.3+0.1 –0.0 2.0±0.2 1.25±0.10 (0.425) (0.65) (0.65) 0.2±0.1 0.9±0.10 to 0.1 0.9+0.2 –0.1 0.15+0.10 –0.05 10° Note) The part number in the parenthesis shows conventional part number.

Silicon Junction FETs (Small Signal) PD  Ta I D  VDS ID  VDS ID  VGS gm  VGS gm  ID Ciss  VDS Coss  VDS 2SK0663 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW) Ta=25˚C VGS=0 – 0.8V – 0.6V – 0.4V – 0.2V –1.0V Drain to source voltage VDS (V) Drain current ID (mA) 01 2 10826 4 Ta=25˚C VGS=0V – 0.2V – 0.4V – 0.6V – 0.8V –1.0V –1.2V Drain to source voltage VDS (V) Drain current ID (mA) VDS=10V Ta=–25˚C 25˚C 75˚C Gate to source voltage VGS (V) Drain current ID (mA) VDS=10V Ta=25˚C Gate to source voltage VGS (V) Mutual conductance gm (mS) 01 0 826 4 VDS=10V Ta=25˚C IDSS=7.5mA Drain current ID (mA) Mutual conductance gm (mS) 01 2 10826 4 VGS=0 Ta=25˚C Drain to source voltage VDS (V) Input capacitance (Common source) Ciss (pF) 01 2 10826 4 VGS=0 Ta=25˚C Drain to source voltage VDS (V) Output capacitance (Common source) Coss (pF)

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2001 MAR