2SK662 PANASONIC

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Silicon Junction FETs (Small Signal) unit: mm 2SK662 Silicon N-Channel Junction FET For low-frequency amplification n Features l High mutual conductance gm l Low noise type l S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. n Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol V DSX V GDO ID IG PD Tj Tstg Ratings -30 150 125 -55 to +125 Unit V V mA mA mW n Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Source cut-off voltage Mutual conductance Input capacitance (Common Source) Reverse transfer capacitance (Common Source) Noise figure Symbol IDSS * IGSS V GSC gm C iss C rss NV Conditions V DS = 10V, VGS = 0 V GS = -30V, VDS = 0 V DS = 10V, ID = 10mA V DS = 10V, ID = 0.5mA, f = 1kHz V DS = 10V, VGS = 0, f = 1kHz V DS = 10V, VGS = 0, f = 1MHz V DS = 30V, ID = 1mA, GV = 80dB R g = 100kW , Function = FLAT min 0.5 - 0.1 max -100 -1.5 Unit mA nA V mS pF pF mV * IDSS rank classification Marking Symbol (Example): 1O typ 3.5 Runk IDSS (mA) Marking Symbol P 0.5 to 3 1OP Q 2 to 6 1OQ R 4 to 12 1OR 1: Source 2: Drain EIAJ: SC-70 3: Gate S-Mini Type Package (3-pin) 2.1±0.1 1.3±0.10.9±0.1 0.7±0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0±0.2 0.650.2 0.65 0 to 0.1 0.2±0.1

Silicon Junction FETs (Small Signal) PD ¾ Ta I D ¾ VDS ID ¾ VGS gm ¾ VGS gm ¾ ID C iss, Coss ¾ VDS C rss ¾ VDS NF ¾ f 2SK662 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW ) 01 2 10826 4 Ta=25˚C VGS =0V – 0.2V – 0.4V – 0.3V – 0.1V Drain to source voltage VDS (V) Drain current ID (mA ) 9.6 8.0 6.4 4.8 3.2 1.6 Ta=75˚C 25˚C –25˚C VDS =10V Gate to source voltage VGS (V) Drain current ID (mA ) VDS =10V Ta=25˚C IDSS =5mA 2mA Gate to source voltage VGS (V) Mutual conductance gm (mS ) 08 26 4715 3 VDS =10V Ta=25˚CIDSS =5mA 2mA Drain current ID (mA ) Mutual conductance gm (mS ) 1 3 10 30 100 VGS =–3V f=1MHz Ta=25˚C C iss C oss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) 1 3 10 30 100 VGS =3V f=1MHz Ta=25˚C Drain to source voltage VDS (V) Reverse transfer capacitance (Common source) Crss (pF) 10 10 2 103 104 105 VDS =10V ID =5.2mA Ta=25˚C R g=500W 1kW Frequency f (Hz) Noise figure NF (dB)