2SK657 PANASONIC

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Silicon MOS FETs (Small Signal) unit: mm 2SK657 Silicon N-Channel MOS FET For switching n Features l High-speed switching l M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol V DSS V GSO ID IDP PD Tch Tstg Ratings ±100 ±200 400 150 -55 to +150 Unit V V mA mA mW n Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time Symbol IDSS IGSS V DSS V th R DS(on) | Yfs | C iss C oss C rss ton* toff* Conditions V DS = 10V, VGS = 0 V GS = 8V, VDS = 0 ID = 100mA, VGS = 0 ID = 100mA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz V DS = 5V, VGS = 0, f = 1MHz V DD = 5V, VGS = 0 to 5V, RL = 200W V DD = 5V, VGS = 5 to 0V, RL = 200W * ton, toff measurement circuit min 1.5 typ Unit mA mA V V W mS pF pF pF ns ns max 3.5 1.2 Vout VDD = 5VVGS = 5V 50W 200W100mF Vin 90% 10% 10% 90% Vout ton toff Internal Connection G D S 1: Gate 2: Drain 3: Source EIAJ: SC-71 M Type Mold Package 6.9±0.1 0.55±0.1 0.45±0.05 1.0±0.1 1.0 2.5±0.1 1.0 1.5 1.5 R0.9 R0.9 R0.7 0.4 0.85 4.1±0.2 4.5±0.1 2.5 2.5 123

Silicon MOS FETs (Small Signal) PD ¾ Ta I D ¾ VDS | Yfs | ¾ VGS C iss, Coss, Crss ¾ VDS ID ¾ VGS R DS(on) ¾ VGS V IN ¾ IO 2SK657 0 160 40 120 80 14020 100 60 0.7 0.6 0.2 0.5 0.4 0.1 0.3 Ambient temperature Ta (˚C) Allowable power dissipation PD (W ) 01 2 10826 4 120 100 VGS =6.0V 5.5V 5.0V 4.5V 3.5V 2.5V 3.0V 4.0V Ta=25˚C Drain to source voltage VDS (V) Drain current ID (mA ) 01 2 10826 4 VDS =5V Ta=25˚C Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS ) 1 3 10 30 100 VGS =0 f=1MHz Ta=25˚C C iss C oss C rss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 01 2 10826 4 120 100 Ta=–25˚C 25˚C 75˚C VDS =5V Ta=25˚C Gate to source voltage VGS (V) Drain current ID (mA ) 01 2 10826 4 120 100 ID =20mA Ta=75˚C 25˚C –25˚C Gate to source voltage VGS (V) Drain to source ON-resistance RDS(on) (W ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 VO =5V

Ta=25˚C Output current IO (mA ) Input voltage VIN (V)