2SK656 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Silicon MOS FETs (Small Signal) unit: mm 2SK656 Silicon N-Channel MOS FET For switching n Features l High-speed switching l Small drive current owing to high input inpedance l High electrostatic breakdown voltage Internal Connection G R 1 D S R 2 1: Source 2: Drain 3: Gate EIAJ: SC-72 New S Type Package 4.0±0.2 marking 2.54±0.15 1.271.27 3.0±0.215.6±0.5 2.0±0.2 0.7±0.1 0.45–0.1 123 +0.2n Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol V DSS V GSO ID IDP PD Tch Tstg Ratings 100 200 200 150 -55 to +150 Unit V V mA mA mW n Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time Symbol IDSS IGSS V DSS V th R DS(on) | Yfs | V OH V OL R 1 + R2*1 C iss C oss C rss ton*2 toff*2 Conditions V DS = 10V, VGS = 0 V GS = 8V, VDS = 0 ID = 100mA, VGS = 0 ID = 100mA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz V DD = 5V, VGS = 1V, RL = 200W V DD = 5V, VGS = 5V, RL = 200W V DS = 10V, VGS = 0, f = 1MHz V DD = 5V, VGS = 0 to 5V, RL = 200W V DD = 5V, VGS = 5 to 0V, RL = 200W *1 Resistance ratio R1/R2 = 1/50 *2 Pulse measurement min 1.5 4.5 100 typ 4.5 1.1 Unit mA mA V V W mS V V kW pF pF pF ms ms max 3.5 200

Silicon MOS FETs (Small Signal) PD ¾ Ta I D ¾ VDS ID ¾ VGS | Yfs | ¾ VGS C iss, Coss ¾ VDS R DS(on) ¾ VGS IO ¾ VIN V IN ¾ IO 2SK656 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW ) 01 0 826 4 120 100 Ta=25˚C 5.5V 5.0V 4.0V 3.0V 4.5V 3.5V VGS =6.0V Drain to source voltage VDS (V) Drain current ID (mA ) 01 0 826 4 120 100 VDS =5V Ta=–25˚C 25˚C 75˚C Gate to source voltage VGS (V) Drain current ID (mA ) 01 0 826 4 VDS =5V Ta=25˚C Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS ) 0.1 1 10 1000.3 3 30 VGS =0 f=1MHz Ta=25˚C C iss C oss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) 01 0 826 4 120 100 Ta=75˚C 25˚C –25˚C ID =20mA Gate to source voltage VGS (V) Drain to source ON-resistance RDS(on) (W ) 05 413 2 0.001 0.003 0.01 0.03 0.1 0.3

10 VO =5V

Ta=25˚C Input voltage VIN (V) Output current IO (mA ) 0.1 1 10 1000.3 3 30 0.1 0.3 100 300

1000 VO =1V

Ta=25˚C Output current IO (mA ) Input voltage VIN (V)