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Silicon MOS FETs (Small Signal) unit: mm 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching I Features GLow ON-resistance RDS(on) GHigh-speed switching GAllowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings ±0.5 750 150 −55 to +150 Unit V V A A mW I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time Symbol IDSS IGSS VDSS Vth RDS(on)*1 | Yfs | Ciss Coss Crss ton*2 toff*2 Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100µA, VGS = 0 ID = 1mA, VDS = VGS ID = 0.5A, VGS = 10V ID = 0.2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz *1 Pulse measurement *2 ton, toff measurement circuit min 1.5 typ 300 Unit µA µA V V Ω mS pF pF pF ns ns max 0.1 3.5 Vin = 10V t = 1µS f = 1MHZ 50Ω 68Ω ton toff Vin 10% 90% 10% 90%Vout Vin VoutVDD = 30V Vout 1: Source 2: Drain 3: Gate JEDEC: TO-92 EIAJ: SC-43 5.0±0.2 0.7±0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 0.45+0.15 –0.1 2.5 12 3 +0.6 –0.2 4.0±0.2 5.1±0.212.9±0.5 2.3±0.2 0.7±0.2 Note) The part number in the parenthesis shows conventional part number.
Silicon MOS FETs (Small Signal) PD Ta I D VDS ID VGS | Yfs | VGS Ciss, Coss, Crss VDS RDS(on) VGS RDS(on) Ta 2SK0614 0 160 40 120 80 14020 100 60 1200 1000 800 600 400 200 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW) 01 0 826 4 1.2 1.0 0.8 0.6 0.4 0.2 Ta=25˚C 4.5V 3.5V VGS=5.5V Drain to source voltage VDS (V) Drain current ID (A) 01 0 826 4 1.2 1.0 0.8 0.6 0.4 0.2 VDS=10V Ta=25˚C Gate to source voltage VGS (V) Drain current ID (A) 06 5413 2 600 500 400 300 200 100 VDS=15V f=1kHz Ta=25˚C Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS) 1 10 100 10003 30 300 120 100 VGS=0 f=1MHz Ta=25˚C Ciss Coss Crss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 02 0 1641 2 8 Ta=75˚C 25˚C –25˚C ID=500mA Gate to source voltage VGS (V) Drain to source ON-resistance RDS(on) (Ω) –50 75 50–25 25 0 ID=500mA VGS=5V 10V Ambient temperature Ta (˚C) Drain to source ON-resistance RDS(on) (Ω)
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