2SK596 SANYO
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SANYO SEMICONDUCTOR CORP 3e— D BM 799707b 0009234 7 om He 2SK596 1229-28 Bo aa elt rats pages 2034 N-Channel Junction Silicon FET . ; Capacitor Microphone Applications @zz2i5 Features , . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic . Excellent transient characteristic . Adoption of FBET process Absolute Maximum Ratings at Ta=25°C unit Gate to Drain Voltage Vepo -20 Vv . Gate Current Ig 10 mA Drain Current Tp 1 om - Allowable Power Dissipation Pp 100 oW Junction Temperature Tj 125 Storage Temperature Tstg -55 to +125 °C Electrical Characteristics at Ta=25°C min typ max unit Gate to Drain v, Ig=~100uA -20 v BR)GDO “G Breakdown Voltage (aR) 900 Cutoff Voltage Ves(orf. Vpg=5VsIp=1ua 0.6 -1.5 v Drain Current 198( ) Vpg=5V1Vgg20 100* 800" uA Forward Transfer Admittance |Yeg| Vpg25V 1 Vgg=0» f= 1kHz 0.4 1.2 mS Input Capacitance Cass Vv g25V Vgg=0, f= MHz 3.5 pF Output Capacitance Crss Vpse5V, Vage0, £2 1NHz 0.65 pF ®: The 2SK596 is classified by Ipgg as follows (unit:uA): (foo a 170 | 150 B 20 | 210 ¢ 350 | 320 D 480 | 440 E 800 . [Ta=25°C, Vog=4.5V, Ry = 1kohm,Cin=15pF ,See specified Test Circuit.] min typ max unit Voltage Gain G, Vj pn? 10nV, f= 1kKHz, 3.0 dB Reduced Voltage aby Vin? 10mV, f= 1kHz -1.2 -3.5 dB Characteristic Voc=4.5—1.5V Frequency Characteristic ACyp f2ikHz to 110Hz -1.0 dB Continued on next page. Specified Test Circuit Case Outline 2034 . Voltage gain (unit: am) Frequency characteristic . Distortion Reduced voltage characteristic Veews.sv al | *
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SANYO SEMICONDUCTOR CORP 32E D Mm 7997076 0009235 9 2SK596 a 1-29-25 — 2 Continued form preceding page. at -min typ max unit Input Resistance Zin f=1kHz ry Mohm Output Resistance z f21kHz . 700 ohm Total Harmonic Distortion TAD Vyn=30mV, f= 1kHz 1.0 t Output Noise Voltage Vuo Vgn20,A curve -110 4B "oe "eee Po sot} PPPrTrTr) ..CP EP rCrerern BCE EEE 3g -FEEEREREE a POPE geo oer Pf EERE 9 ee Se | A ae ov ee meee brain to source Voltage, Vg ~ v ° ° Drain to Source Voltage, Voy ~ Vv ° Tp - Ves 0 lyfsl - Toss . PET COL. ee
8 BL #2 TkHz
4 £3 iT | 3 <I 10.4 “ ee EEE é . (922262 e seen Gate to Source Voltage, Vgg - V “Drain Current ,Ipgg - mA ° VGs(off) - Ipss Ciss - Vos eB) ET = La) S.0 Peet eH EE PAS PARLE pith] gg eS 3 4 al] Ty rr eral | TTT 3 3 2 ALiD TP RHEE praia Current, Ings - mA ° Drain to Source Voltages tpg -v eee 554 : ;
SANYO SEMICONDUCTOR CORP 3cE D 799707b go0923b O 2SK596 po T-29-25 ay rss - WOS , Gy - Ipss . ee] {Tt TT fyss-ov eevistey | | | [| 83 aaa aq F—RL=1.0k0 ge 3 [f=1kHz [7 al 1 |toss:Vps=5.0v | | KT SSeS ge er . é ee a4 aman PP) gt a ei, TP tt) aye tt ty PUT TTT Ty) pee 5 0 * ro ec Drain to Source Voltage, ps - V . Drain Current ,Ipgg - uA :
1 AGvV - Ipss “ - THD - Ipss
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34 Vinz10ay |_| = Vin=3dav rT
loss:Vostetov | | [| g LpssiVps=5.0v a Drain Current, Ipgs - UA = Drain Current, Ips - uA 7 “TT or ee a a g4.-f | | TIT] *, [rT TT TT PEEPSREEE BCESEEEH . 3 a a a wlziivees.sv| | TF | Zaalzortvecse.sv—-—_| | | | E vinsioow [| [TT | 3 Vinstoav | oT | asl loss:Voses.ov) | | | | sm togs Vises 0 | [| | | 4 Drain Current, Tpgg - uA = Drain Current,Ipss - uA Vito _- TDss THD - VIN eur Apaoap ttt B Tross: Vos=5.ov | | . By DSS: Vos=S. || 810 —1 EOE th POOR ieee go oD 74 ee a : 4mm Heese WE 8 ud | 71 a ) om fe 0 0 Cy Cc) 160 ma mm Drain Current,Ipgg - uA Input Voltage, Vyy - aV : . 555 j
SANYO SEMICONDUCTOR CORP 32E D M@ 7997076 0009237 2 eM a ToT en 109 I PONCCe PPPS a 5a x . ff tT PIN . aL NG a ‘Ambient Tenperatere,te o 556
| : | SANYO SEMICONDUCTOR CORP 326 D mm 7997076 OO08715 7 EM | CASE OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS | @All of Sanyo lead formed small signal transistor case outlines are illustrated below. 3 @All dimensions are in mm, and dimensions which are not followed by min. or max. : are represented by typical values. . @No marking is indicated. . "| [ese Outiine=[2003A) unit mm Case Outline—[2019A] unit: mm : 20 0.44 . »; 20 ote 0.45 ‘ 14 $ i : iy cay u 1) Hopes fb | |i ; : Le 045 | “ c | 1 045 | : snore. 70-92 “e B. base 50 14.0% Leo : EIAI : Sc-43 €. collector JEDEC: TO-92 D: Drain 4 SANYO: NP E. Emitter EIAJ ; Sc-43 G: Gate a . SANYO: NP S$: Source : 4 Case Outline—[2004A] unit: mm Case Outline—[2025] unit: mm ai ons . 20 0.66 ‘| Fa 4 0.65 ft! + = a 3 ‘at Fi a be sof — 14.0 Leco =t . 2 JEDEC: TO-92 C. Collector pou ot : EIAJ : SC-43 E. Emitter [2 = °Ie Si Gate j - SANYO: NP B. Base Er of orein | [ase Outine=[2008A1 units mm Case Outline—[2026) unit: mm ; 2.0 046 | os 3 s so: ea” “Hi { 3 ik :[ } 23 4 1 8 ra 2 fry { a 5.0 14.0 400: naa ct cae JEDEC: TO-92 GG: Gate D: brain
7 EIAJ : SC-43 S: Source (°° les 8} Source
4 SANYO: NP D: Drain 74
- Case Outline—[2006A] unit: mm Case Outline—[2027A] unit: mm . 9 3.0 0.5 40 azar : . iH Ca ies x 8 Ca. i Ps 3 ve a EAN . 5: 0 4 YN . : : EIAS: SC-51 Bs Base fe RX bt brain 4 SANYO1MP C: Collector / $1 Source . .
14 Er Emitter Ta TH" sao: DPER
a a! bot SANYO SEMICONDUCTOR CORP 32E D BM 7997076 OO0871b 9 om be Case Outline—[2029A] unit: mm Case Outline—[2061] unit: mm | T-91-20 D aamin 20 ro O.ke rot ef els 045 r so Sadie A] i it, a4 eee 0.45 | aied my Vata rl aT aN hosel 14.0 _ Loo is be | A UX 7 1 : SCH : ai fi Gr tector BEAT + Sora Br Enitter 4 aaa SMVO:DPER SANYO: NP” in 4 Case Outline—[2033] unit: mm 2.2 Case Outline~[2064] unit: mm. bo ech 80 hey tm Poaceae 1" foc 4 _ Fe ee a es bee Pr a B: Base on fea r C: Collector &: emitter : E: Emitter : A) e Bae a SANYO: SPA a SANYO: NAP i: . Case Outline—(2034] unit: mm 22 i | aan a wf : or es Fo - ot 3 oo D: Drain 04 oo G: Gate : | S: Source Ls . : SANYO: SPA a Case Outiine—(2040] unit: mm 2a . in ote * i ve ° 0.6 : G: Gate * on S: Source : PEs 7 D: Drain io SANYO: SPA ro Case Outline~{2051] unit: mm — 22 eo, 3 15.0 rire 19 — i? : Ms * . 5 Slo: collector 0.4 .. : F. S E: Emitter : ed . B: Base I _ SOF SP ESS EEE EEE SSS ea