2SK583 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
« Large |yfs| + Enhancement type - Small ON-resistance Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage Ys 50 Vv Gate to Source Voltage Ves *12 OV Drain Current . Ip 200 mA Drain Current (Pulse) Ipp 300 mA Allowable Power Dissipation Pp 600 oW Channel Temperature — Ton 125 °c Storage Temperature Tstg -55 to +125 °C Electrical Characteristics at Ta=25°C min typ max unit Drain to Source Voltage V(pr)Ds Ip=104 A, Vgg=0V 50 v Gate Cutoff Current Tess Vgg= 10V, Vp g=0V 0.01 10 nA Cutoff Voltage Ves(ore) Yps=10V,Ip=100%A 0.3 0.91.5 V Drain Current Ibs Vpg=20V, Vgg=0V 1 4A Forward Transfer Admittance DES) Vpg=10V,Ip=50mA,f=ikHz 25 40 mS Intput Capacitance Ciss Vpg=10V, Vgg=0, f= MHz 15 pF Output Capacitance Coss Vp = 10V, Vg 0, f= 1MHz 6 pF Reverse Transfer Capacitance Crs Vpg=10V, Vgg=0, f= 1MHz 0.5 pF ON-Resistance Yps(on) Vgg=10V,Ip=10mA 20 Q Package Dimensions 2005A (unit: mm )
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ot, 4,0: JEDEC: TO-92 G: Gate EIAJ : SC-43 S: Source SANYO: NP D: Drain SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6140MO/5137TA/3205MY,TS No. 1793-1/2
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