2SK543

2SK543 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

. Low noise. NF=1.8dB typ(f=100MHz) . High power gain. PG=27dB typ(f=100MHz) « Small reverse transfer capacitance. Crgg20-035PF (Vp g=10V, f= 1MHz) Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage Ys 20 v Gate to Source Voltage Ves 25 Vv Drain Current Ip -30 mA Allowable Power Dissipation Py 200 «=oW Channel Temperature Teh 125 °C Storage Temperature Tstg -55 to +125 % Electrical Characteristics at Ta=25°C min typ max unit Drain to Source Voltage Ysx Vgge-4V,Ip=100nA — 20 v Common Source Gate Cutoff Tess Vp gt OV, Vgge*5V 10 nA Current Drain Current Ipnss Vpg=10V, Vgg=0V 1.2% 12* mA Gate to Source Cutoff Voltage Vg. (off) Vpg=10V,Ip=100pA -2.5 Vv Forward Transfer Admittance ves Vp = 10V, Vgg=0V 11 mS feikiz Input Capacitance Cass Vp g=10V, Vgg=0V 2.4 pF Reverse Transfer Capacitance Crss Po iMaz 0.035 pF Power Gain PG ps=l0V, Vgg=0V 27 dB Noise Figure NF fe foomnaz 1.8 3.0 dB . See specified Test Circuit. *: The 28K543 is classified by Ings as follows (unit:mA): 1.2737 3.0 725 4 6.0 15.0 5 12 (Note) Marking :CJ Ipngg rank: 3,4,5 Package Dimensions 2024A (unit:mm) 4 0.16 s 4] > T 0~0.1 Ltd G S: Source . G: Gate D: Drain o« SANYO : CP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6037K1/2075KI,TS No.1791-1/4 .

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Frequency,f - MHz Frequency ,f - MHz Forward Transfer Admittance yfs - f 10 mT Yos - f 7 [vss T TTT Ty ttt “og= 107 | | l4 a PP eg topo tl, | Pee ey = — | ee | ae tee === Sae SFIS OS Lo) g fer i oj] SEO’ | | = i i eS? Den £stheretyttt & FAI q P & Lr 3 A CC ee a GE ee 0 10 a) 77 | Form tT TL Ty fl PIAA TT TT a . a a a ° _Frequency,t - MHz Frequecy,f - MHz a Rreanoneyy f= Mn No. 1791-3/4'

• SS PG,NF ~ Pp - T. ™ GNF - Ip 20, 'D a Pity ft free] a TTT TTT t= 1 00kHz an 1 200) ve {to LIN EE EET 11% a ae gen |e TT TTT | Se : a, = 2] > & XI ae +7] |] ti] | 3 a S ga &. 70 pS eeutt{ [TT til | ¢ \\ em 3 BET TPT fe Bey po UN Fey tite TT [Er | 3g. _ titer TE EN 19 10 o ww © 0 © mo 1 160 Drain Current,Ip - mA Ambient Temperature,Ta - °C PG,NF. Test Circuit ur lz Ed 50 VG vo Li: 1mmé plated wire 10mmé 6T, tap: 3T from H side L2: 1mmé plated wire 10mmé 7T, tap: 4T from H side Unit (Resistance : 2, Capacitance : F) No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of . their officers and employees jointly or severally. . W Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.1791-4/4