2SK436

2SK436 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 6

Technical content

Features

+ Large | Yel. + Ultralow noise figure. + Small Crss. + Ultrasmall-sized package permitting 25K436-applied sets to be made small and slim. Absolute Maximum Ratings at Ta=25°C . unit Drain-to-Source Voltage Voss 15 Vv Gate-to-Drain Voltage Vaps -15 V Gate Current Ig 10 mA Drain Current Ip 20 mA Allowable Power Dissipation Pp 150 mW Junction Temperature Tj 125 °C Storage Temperature Tstg —55to+125 °C Electrical Characteristics at Ta=25°C min typ max unit G-D Breakdown Voltage Vesriops Ig=—10nA,Vps=0 -15 Vv Gate Cutoff Current Igss Ves= —10V,Vps=0 -10 nA Cutoff Voltage Vesom Vps=5V,Ip=100nA -05 -15 Vv Drain Current Ipss Vps=5V,Ves=0 1.2% 12.0% mA Forward Transfer Admittance | Yl Vps=5V,Vgs=0, f=1kHz 8.0 17 mS Input Capacitance Ciss Vps=5V,Vgs=0, f= 1MHz 7.0 pF Reverse Transfer Capacitance Cras Vps=5V,Vgs=0, f=1MHz 2.0 pF Noise Figure NF Vps=5V,Ip=1mA,Rg=1kQ 15 4B f=1kHz 3X : The 2SK436 is classified by Ipgg as follows : (unit : mA) 12 17 21 [17 18 30 [25 19 42 | [35 20 60 |5.0 21 85 [7.3 22 12.0 Note) Marking: A Ipsgrank : 17, 18, 19, 20, 21, 22 Package Dimensions 2050A (unit : mm) 4 016 ; =] [i - ce 1 2 ra [bee] 1: Source I 1 2: Drain 3: Gate a | . O46 SANYO: CP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 90895MO(KOTO)6017KI/N283KI, TS(KOTO)8-5846 No.1405-1/6

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a 9's Ep 7 VEE Ee a 7 A ee EEF ottttTATT TT TT, TAT LLL ee ease ee EEE "prequency,f— Hz Frequency,f — MHz Forward Transfer Admittance Y4, ~ f Output Admittance Yo, — f 7 [fT TTT Vp5=5.00 b | Vpg=5.0V PT ee TUT Ut ee TH eee eee Bae tte, aot tt Veen Ms tt eet" vet eres — “T rs spotty * eee TTT. ECS, Ee oe yt Py yy " prequency,f— MEz Frequency, ~ MHz No.1405-3/6

Input Admittance Yi, — Vps Input Admittance Vis — Ip (fonts | rPiontite 0} to ge ae a es as] [eer de a a pie | tT eT | tt 5 10 ‘e 19 10 Drain-to-Source Voltage, Vps — V Drain Current,Ip — mA Reverse Transfer Admittance Y,, — Vps Reverse Transfer Admittance Y;; — Ip Vos =' =| TT 0 i = Common source 0 4 Common ue an jp ee ff at + — Eh % _ mld | Pee | ee fey [reset PT) sep HTT Tr | Lt te tt a a tf | f jy y | pj ft yy Drain-to-Source Voltage, Vps — V © rain Current Ip — mA ° Forward Transfer Admittance Ys — Vps Forward Transfer Admittance Vf; — Ip CTT Tre f 1=10MHz = ; . Pet] | | poset Le o = — bre Tt o @e4p+er Ty te. iH ee b ae es GO 4 Hi JreatT tty | _ Pe {|| | tt, { {| rt |] [yy es a a Drain-to-Source Voltage, Vps — V Drain Current,Ip — mA . Output Admittance Yo, — Vos Output Admittance Yo, — Ip rT. si ame re w Common eource {10 T [_[ |_| Common source [ ae [tl pee | I 5 1 La | 0 a] -N ~ ay 1 | el =e oon tt i a é rot oS Sai eal tr oT | Tits a I Set- 1 i an ee ee KR ER pit tt tt Ppt 9" + 5 a a Drain-to-Source Voltage,Vpg — V Drain Current,Ip — mA No.1405-4/6

Input Admittance Vis ~ Vps Input Admittance Yi, — Ip f=100MHz f=100MHz 10 10 [| { = 7 Pee Ee HH. {CSE EE Te ant i ce ee —< 5 | 5 ee i ee PP ey REEF ol 1D 5 ad ° Drain-to-Source Voltage,Vpg — v rain Current,Ip — mA ° Reverse Transfer Admittance Y;, — Vps Reverse Transfer Admittance ¥;, — Ip a [| Yost tof —f 10 10 0 a fj fT ft iy tt | Pee te ep es é Phot a a Pa eft PP itr i pep yt, Drain-to-Source Voltage,Vps — V ° Drain Currently — mA ° Forward Transfer Admittance Y#, — Vps Forward Transfer Admittance Y¢, — 'p ie a we te TE) oad | eT reat PE Pte peer Saas Hee Pt Drain-to-Source Voltage, Vps — V Drain CurrentIp — mA Output Admittance Yo, — Vps Output Admittance Yo, — Ip £=100MHz f= 100MHz [ann Common source 4 Common source |, wo > 10 sh ee i ee ee ar) i= Psst ter lt PT] ty yy, “EFF of L rr | 1 }}| [] Drain-to-Source Voltage, Vps — V Drain Current,Ip — mA No.1405-5/6

Input Admittance Vig — f Reverse Transfer Admittance Yig — f Ii] || Gramon Gommnon

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Frequency, f — MHz Frequency,f — MHz co Forward Transfer Admittance Vig — f Output Admittance Yog — f Fr | [TT iesex |” 1ama Ip=3.0mA Ip=8.0mA (| ty] Common gate Common gate 5 = 5 10 LL 0 a 4 hy ca ‘9 aT sy itt ot nn Ayan —~| | 7 i] # a ys F Es || fal TTT’ ° eres) Livy tt ttt 00 1 10) [.) Frequency,f — MHz Frequency,f— MHz ° No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Mi Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. i Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, This catalog provides information as of September, 1995, Specifications and information herein are subject to change without notice, No.1405-6/6