2SK4209

2SK4209 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 5

Technical content

Features

• Low ON-resistance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Avalanche resistance guarantee. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 800 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) I D 12 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 24 A Allowable Power Dissipation P D 2.5 W Tc=25°C 190 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 410 mJ Avalanche Current *2 I AV 12 A Note : *1 VDD=99V , L=5mH, IAV=12A *2 L≤5mH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 800 V Zero-Gate Voltage Drain Current I DSS V DS=640V, VGS=0V 1.0 mA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 2.0 4.0 V Marking : K4209 Continued on next page. O2809QB TK IM TC-00002109 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1516-2/5 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Forward Transfer Admittance | yfs | VDS=20V, ID=6A 3.4 6.8 S Static Drain-to-Source On-State Resistance RDS(on) I D=6A, VGS=10V 0.83 1.08 Ω Input Capacitance Ciss V DS=30V, f=1MHz 1500 pF Output Capacitance Coss V DS=30V, f=1MHz 250 pF Reverse Transfer Capacitance Crss V DS=30V, f=1MHz 87 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 27 ns Rise Time tr See speci fi ed Test Circuit. 72 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 260 ns Fall Time tf See specifi ed Test Circuit. 77 ns Total Gate Charge Qg V DS=200V, VGS=10V, ID=12A 75 nC Gate-to-Source Charge Qgs V DS=200V, VGS=10V, ID=12A 12 nC Gate-to-Drain “Miller” Charge Qgd V DS=200V, VGS=10V, ID=12A 38 nC Diode Forward Voltage VSD IS=12A, VGS=0V 0.85 1.2 V Package Dimensions unit : mm (typ) 7503-004 Switching Time Test Circuit Avalanche Resistance Test Circuit PW=10μs D.C.≤0.5% P. G RGS=50Ω G S D ID=6A RL=33.3Ω VDD=200V VOUT 2SK4209 VIN 10V VIN 14.0 15.6 4.8 2.0 20.020.0 3.5 2.6 1.21.3 15.0 3.2 1.4 1.6 1.0 0.6 5.45 5.45 12 3 0.6 2.0 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB 50Ω ≥50Ω RG VDD L 10V 2SK4209

No. A1516-3/5 RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS IS -- VSD SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V | yfs | -- ID Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS Source Current, IS -- A IT14792 --50 --25 150 0 25 50 75 100 125 25°C 75°C Tc= --25°C ID=5A --25°C 25°C Tc=75°C IT14791 57 61 0 894 0.5 3.0 1.5 1.0 2.5 2.0 0.5 1.0 3.0 2.5 2.0 1.5 IT14790 639 1 5 120 VDS=20V VGS =10V , I D=6.0A IT14793 0.1 23 5 7 1.0 21.0 32 3 57 10 Tc= --25 25°C 75°C VDS=20V IT14794 0.01 0.1 1.0 Tc=75 --25 VGS=0V IT14796 02 0 10 30 100 1000 5040 Ciss Crss Coss IT14789 51 5 10 20 250 Tc=25°C VGS=4V 10V 8V 0.1 1.0 223 5 7 10 233 57 1000 100 IT14795 td(off) td(on) VDD=200V VGS=10V tf tr f=1MHz

No. A1516-4/5 A S OVGS -- Qg PD -- Tc Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 20 40 60 80 100 120 3.0 2.5 140 160 2.0 1.5 1.0 0.5 IT14799 IT14798 0.1 1.0 0.1 100 μs 100ms10ms 1ms DC operation 1.0 10 10023 5 7 23 5 7 7 2 100035 2 2 35 7 ID=12A Operation in this area is limited by RDS(on). IDP=24A 20 40 60 80 100 140 120 100 120 140 180 190 160 200 160 IT14800 08 0 7050 6010 20 30 40 IT14797 VDS=200V ID=10A PW≤10μs Tc=25°C Single pulse EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT10478

No. A1516-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of October, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 2SK4209 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.