2SK4197FS_10 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 5
Technical content
Features
- High-speed switching.
- Avalanche resistance guarantee.
- 10V drive. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 600 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) IDc *1 Limited only by maximum temperature Tch=150°C 3.5 A IDpack *2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 3.3 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 13 A Allowable Power Dissipation P D 2.0 W Tc=25°C (SANYO’s ideal heat dissipation condition)*3 28 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *4 E AS 29 mJ Avalanche Current *5 I AV 3.3 A Note : *1 Shows chip capability. *2 Package limited. *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made o f aluminium. *4 VDD=50V , L=5mH, IAV=3.3A *5 L≤5mH, Single pulse Marking : K4197FS
31010 TK IM TC-00002277 / N2608QB MS IM TC-00001730
General-Purpose Switching Device
Applications
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No. A1368-2/5 Switching Time Test Circuit Avalanche Resistance Test Circuit Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 600 V Zero-Gate Voltage Drain Current I DSS V DS=480V, VGS=0V 100 μA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 3 5 V Forward Transfer Admittance | yfs | V DS=10V, ID=1.8A 0.8 1.6 S Static Drain-to-Source On-State Resistance RDS(on) I D=1.8A, VGS=10V 2.5 3.25 Ω Input Capacitance Ciss V DS=30V, f=1MHz 260 pF Output Capacitance Coss V DS=30V, f=1MHz 50 pF Reverse Transfer Capacitance Crss V DS=30V, f=1MHz 9.7 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 12 ns Rise Time tr See speci fi ed Test Circuit. 20 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 28 ns Fall Time tf See specifi ed Test Circuit. 12 ns Total Gate Charge Qg V DS=200V, VGS=10V, ID=3.5A 11 nC Gate-to-Source Charge Qgs V DS=200V, VGS=10V, ID=3.5A 2.6 nC Gate-to-Drain “Miller” Charge Qgd V DS=200V, VGS=10V, ID=3.5A 5.8 nC Diode Forward Voltage VSD IS=3.5A, VGS=0V 0.9 1.2 V Package Dimensions unit : mm (typ) 7528-001 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS 10.16 0.8 15.8712.98 3.3 6.68 3.23 1.47 MAX 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 PW=10μs D.C.≤0.5% P. G RGS=50Ω G S ID=1.8A RL=111Ω VDD=200V VGS=10V VOUT 2SK4197FS D 50Ω ≥50Ω RG VDD L 10V 2SK4197FS
No. A1368-3/5 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- TcRDS(on) -- VGS IS -- VSD Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT13709 IT13710 IT13711 IT13712 --50 --25 0 25 50 75 100 125 150 10 3052 5 15 20 02 0 181641 221 0 68 1 4 15V 10V Tc=25°C VDS=20V VGS=5V 6V IT13714 0.01 0.1 1.0 IT13713 --25 Tc=75 0.1 23 5 7 1.0 23 5 7 1.0 0.1 VDS=10V Tc= --25 75°C VGS=0V Tc= --25°C 25°C 75°C 1513971 1 1 461 0 81 2 ID=1.8A Tc=75°C 25°C --25°C VGS =10V , I D=1.8A IT13715 100 0.1 1.0 23 5 7 23 5 7 VDD=200V VGS=10V td(off) tr tf td(on) 100 1000 5010 30 40 20 IT13737 f=1MHz Ciss Coss Crss 25°C | yfs | -- ID Forward Transfer Admittance, | yfs | -- S
No. A1368-4/5 IT13719 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg 25 50 75 100 125 150 100 120 175 EAS -- Ta Avalanche Energy derating factor -- % IT10478Ambient Temperature, Ta -- °C Drain-to-Source V oltage, VDS -- V A S O Drain Current, ID -- AAllowable Power Dissipation, PD -- W PD -- Tc Case Temperature, Tc -- °C 20 40 60 80 100 120 2.5 140 160 PD -- Ta Allowable Power Dissipation, PD -- W2.0 1.5 1.0 0.5 Ambient Temperature, Ta -- °C IT13717 IT13720 61 0428 VDS=200V ID=3.5A 20 40 60 80 100 140 120 160 IT14236 0.01 0.1 1.0 0.1 1.0 10 10023 5 7 23 5 7 7 2 100035 2 35 7
2 IDP=13A
limited by RDS(on). DC operation100ms 10ms 1ms 100 μs 10μs IDC=3.5A IDpack=3.3A Tc=25°C Single pulse PW≤10μs
No. A1368-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of March, 2010. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 2SK4197FS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.