2SK4177-DL-E SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • Low ON-resistance, low input capacitance, ultrahigh-speed switching.
  • Adoption of high reliability HVP process.
  • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 1500 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 2A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 4 A Allowable Power Dissipation P D 1.65 W Tc=25°C8 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 42 mJ Avalanche Current *2 I AV 2A *1 VDD=99V , L=20mH, IAV=2A *2 L≤20mH, single pulse Marking : K4177 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 31208QB TI IM TC-00001270 SANYO Semiconductors DATA SHEET 2SK4177 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No. A0869-2/5 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 1500 V Zero-Gate Voltage Drain Current I DSS VDS=1200V, VGS=0V 100 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 2.5 3.5 V Forward Transfer Admittance ⏐yfs⏐ VDS=20V, ID=1A 0.7 1.4 S Static Drain-to-Source On-State Resistance RDS(on) I D=1A, VGS=10V 10 13 Ω Input Capacitance Ciss V DS=30V, f=1MHz 380 pF Output Capacitance Coss V DS=30V, f=1MHz 70 pF Reverse Transfer Capacitance Crss V DS=30V, f=1MHz 40 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 12 ns Rise Time t r See specified Test Circuit. 37 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 152 ns Fall Time t f See specified Test Circuit. 59 ns Total Gate Charge Qg V DS=200V, VGS=10V, ID=2A 37.5 nC Gate-to-Source Charge Qgs V DS=200V, VGS=10V, ID=2A 2.7 nC Gate-to-Drain “Miller” Charge Qgd V DS=200V, VGS=10V, ID=2A 20 nC Diode Forward Voltage V SD IS=2A, VGS=0V 0.88 1.2 V Note) Although the protection diode is contained between gate and source, be careful of handling enough. Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7513-002 7001-003 Switching Time Test Circuit Avalanche Resistance Test Circuit 10.2 8.811.0 2.7 11.5(9.4) 20.9 1.6 0.2 1.3 4.5 0.8 0.4 123 2.552.55 1.2 1 : Gate 2 : Drain 3 : Source SANYO : SMP PW=10μs D.C.≤0.5% P. G RGB=50Ω G S D ID=1A RL=200Ω VDD=200V VOUT 2SK4177 VIN 10V VIN 50Ω10V ≥50Ω VDD L RG DUT 10.2 8.8 1.5MAX2.7 9.93.0 0.2 1.3 4.5 0.8 1.35 0.4 1.4 1.2 2.552.55 0 to 0.3 12 3 2.552.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD

No. A0869-3/5 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Forward Transfer Admittance, ⏐yfs⏐ -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- VGS RDS(on) -- Tc IS -- VSD⏐yfs⏐ -- ID IT07130 IT07131 IT07132 IT07133 --50 --25 0 25 50 75 100 125 150 4.0 3.5 3.0 2.5 2.0 1.5 50454010 3052 5 15 20 35 1.0 0.5 3.0 2.5 2.0 1.5 20181641 221 0 68 1 4 1.0 0.5 10V VGS=4V IT07135 0.01 0.1 1.0 IT07134 --25 Tc=75 0.135 7 2 35 7 2 3 1.0 1.0 0.1 VDS=20V 25°C Tc= --25°C 75°C VGS=0V ID=1A VGS=10V Tc= --25°C 25°C 75°C 20181641 221 0 68 1 4 ID=1A Tc=75°C 25°C --25°C Tc=25°C pulse VDS=20V pulse Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT09037 VDD=200V VGS=10V td(off) tf tr td(on) IT09038 f=1MHz Ciss Coss Crss 100 0.1 1.0 23 5 7 23 0 100 1000 503051 5 2 0 2 5 3 5 4 0 4 510

No. A0869-4/5 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W A S OVGS -- Qg PD -- Tc IT07138 10 20 30 VDS=200V ID=2A EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 25 50 75 100 125 150 100 120 175 IT10478 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 2.0 1.6 1.65 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 No heat sink IT12897 IT12898 100 0 20 40 60 80 100 120 140 160 1.0 0.1 0.01 23 5 723 5 723 5 71.0 10 100 1000 32 IT12896 PW≤10μs Operation in this area is limited by RDS(on). 100 μs1ms 10ms 100ms ID=2A IDP=4A DC operation Tc=25°C Single pulse

No. A0869-5/5PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Note on usage : Since the 2SK4177 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice.