2SK4101FS SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • Low ON-resistance, low input capacitance, ultrahigh-speed switching.
  • Adoption of high reliability HVP process.
  • Attachment workability is good by Mica-less package.
  • Avalanche resistance guarantee. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 650 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) IDc *1 Limited only by maximum temperature Tch=150°C 7A IDpack *2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 6.4 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 28 A Allowable Power Dissipation P D 2.0 W Tc=25°C (SANYO’s ideal heat dissipation condition)*3 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *4 E AS 194 mJ Avalanche Current *5 I AV 6A Note : *1 Shows chip capability. *2 Package limited. *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made o f aluminium. *4 VDD=50V , L=10mH, IAV=6A *5 L≤10mH, Single pulse Marking : K4101 N2608QB MS IM TC-00001728 SANYO Semiconductors DATA SHEET 2SK4101FS N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1366-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 650 V Zero-Gate Voltage Drain Current I DSS V DS=520V, VGS=0V 100 μA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 3 5 V Forward Transfer Admittance | yfs | V DS=10V, ID=3.5A 2.3 4.6 S Static Drain-to-Source On-State Resistance RDS(on) I D=3.5A, VGS=10V 0.85 1.1 Ω Input Capacitance Ciss V DS=30V, f=1MHz 750 pF Output Capacitance Coss V DS=30V, f=1MHz 136 pF Reverse Transfer Capacitance Crss V DS=30V, f=1MHz 28 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 21 ns Rise Time tr See speci fi ed Test Circuit. 40 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 89 ns Fall Time tf See specifi ed Test Circuit. 31 ns Total Gate Charge Qg V DS=200V, VGS=10V, ID=7A 28.5 nC Gate-to-Source Charge Qgs V DS=200V, VGS=10V, ID=7A 5.2 nC Gate-to-Drain “Miller” Charge Qgd V DS=200V, VGS=10V, ID=7A 16 nC Diode Forward Voltage VSD IS=7A, VGS=0V 0.9 1.2 V Package Dimensions unit : mm (typ) 7528-001 Switching Time Test Circuit Avalanche Resistance Test Circuit P. G RGS=50Ω G S ID=3.5A RL=57Ω VDD=200V VOUT 2SK4101FS D PW=10μs D.C.≤0.5% VIN 10V VIN 50Ω ≥50Ω RG VDD L 10V 2SK4101FS 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS 10.16 0.8 15.8712.98 3.3 6.68 3.23 1.47 MAX 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18

No. A1366-3/5 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- VGS RDS(on) -- Tc IS -- VSD| yfs | -- ID Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT12219 IT12216 --50 --25 150 IT12221 0.01 0.1 1.0 0 25 50 75 100 125 ID=3.5A --25°C 25°C Tc=75°C Tc=75 --25 VGS=0V IT12223 02 0 10 30 100 1000 f=1MHz 1051 5 2 0 3 0 250 IT12218 0.5 1.0 3.0 1.5 2.5 2.0 0.5 1.0 3.0 2.5 2.0 1.5 Tc=25°C VGS=5V 10V 15V ID=3.5A, V GS =10V 5040 Ciss Crss Coss 0.1 1.0 23 2 5723 5 7 3 10 100 IT12222 td(off) td(on) VDD=200V VGS=10V tftr 25°C 75°C Tc= --25°C IT12217 642 8 10 20 12 14 16 180 VDS=20V IT12220 0.1 23 5 7 1.0 21.0 10 35 7 2 35 Tc= --25 25°C 75°C VDS=20V Forward Transfer Admittance, | yfs | -- S

No. A1366-4/5 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W A S OVGS -- Qg PD -- Ta PD -- Tc EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 20 40 60 80 100 120 2.5 140 160 2.0 1.5 1.0 0.5 IT12226 20 40 60 80 100 140 120 160 IT12227 03 0 2010 IT12224 25 50 75 100 125 150 100 120 175 IT10478 VDS=200V ID=7A Tc=25°C Single pulse *1. Shows chip capability *2. SANYO's ideal heat dissipation condition IT14235 0.01 0.1 1.0 0.1 10μs100 μs 100ms 10ms 1ms DC operation 1.023 5 7 2 1035 7 2 IDc(*1)=7A IDpack(*2)=6.4A Operation in this area is limited by RDS(on). IDP=28A PW≤10μs 10035 7 2 100035 7

No. A1366-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of November, 2008. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 2SK4101FS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.